记忆体

Word sized memory access is allowed to unaligned memory addresses.Words are stored in the little-endian order.

字组（word, 4位元组）长度的记忆允许不对齐记忆位址，字组是以低位字节前的顺序储记忆中。

In this study, gallium nitride nanowires were successfully grown on Silicon substrate using a simple resistive heated furnace, APCVD system, at room temperature.

发现氮化镓材料上具有室温铁磁性的性质，被预期能运用磁性记忆的元件和路的材料上。