Because the distribution of molecular director was not affected by lamellar decorating after quench, chemical etching and SEM technique were used to reveal disclination and director patterns.
于样品淬火后晶片装
构上而不影响分子取向矢的分布,因而可以用化学刻蚀和
镜技术揭示其向错和取向矢图。
Because the distribution of molecular director was not affected by lamellar decorating after quench, chemical etching and SEM technique were used to reveal disclination and director patterns.
于样品淬火后晶片装
构上而不影响分子取向矢的分布,因而可以用化学刻蚀和
镜技术揭示其向错和取向矢图。
声明:以上例句、词性分类均网资源自动生成,部分未经过人工审核,其表达内容亦不代表本软件的观点;若发现问题,欢迎向我们指正。
Because the distribution of molecular director was not affected by lamellar decorating after quench, chemical etching and SEM technique were used to reveal disclination and director patterns.
由于样品淬火后晶在织构上而不影响分子取向矢的分布,因而可以用化学刻蚀和
镜技术揭示其向错和取向矢图。
声明:以上例句、词性分类均由互源自动生成,部分未经过人工审核,其表达内容亦不代表本软件的观点;若发现问题,欢迎向我们指正。
Because the distribution of molecular director was not affected by lamellar decorating after quench, chemical etching and SEM technique were used to reveal disclination and director patterns.
由于样品淬火装饰在织构上而不影响分子取向矢的分布,因而可以用化学刻蚀和
镜技术揭示其向错和取向矢图。
声明:以上例句、词性分类均由互联网动生成,部分未经过人工审核,其表达内容亦不代表本软件的观点;若发现问题,欢迎向我们指正。
Because the distribution of molecular director was not affected by lamellar decorating after quench, chemical etching and SEM technique were used to reveal disclination and director patterns.
于样品淬火后晶片装饰在
而不影响分子取向矢的分布,因而可以用化学刻蚀和
镜技术揭示其向错和取向矢图。
声明:以例句、词性分
互联网资源自动生成,部分未经过人工审核,其表达内容亦不代表本软件的观点;若发现问题,欢迎向我们指正。
Because the distribution of molecular director was not affected by lamellar decorating after quench, chemical etching and SEM technique were used to reveal disclination and director patterns.
于样品淬火后晶片装饰
上而不影响分子取向矢的分布,因而可以用化学刻蚀和
镜技术揭示其向错和取向矢图。
声明:以上例句、词性分类联网资源自动生成,部分未经过人工审核,其表达内容亦不代表本软件的观点;若发现问题,欢迎向我们指正。
Because the distribution of molecular director was not affected by lamellar decorating after quench, chemical etching and SEM technique were used to reveal disclination and director patterns.
于样品淬火后晶片装饰在织构上而不影响分子取向矢的分布,因而可以用化学刻蚀和
镜技术揭示其向错和取向矢图。
声明:以上例、词性分类均
互联网资源自动生成,部分
人工审核,其表达内容亦不代表本软件的观点;若发现问题,欢迎向我们指正。
Because the distribution of molecular director was not affected by lamellar decorating after quench, chemical etching and SEM technique were used to reveal disclination and director patterns.
由于样品淬火后晶片装饰在织构上而不影响分子取向矢的分布,因而可以用化学刻蚀和镜技术揭示
向错和取向矢图。
声明:以上例句、词性分类均由互联网资源自动生成,部分未经过人工审,
达内容亦不代
本软件的观点;若发现问题,欢迎向我们指正。
Because the distribution of molecular director was not affected by lamellar decorating after quench, chemical etching and SEM technique were used to reveal disclination and director patterns.
由于样品淬火后晶片装饰在织构上而不影响分子取向矢的分布,因而可以用化学刻蚀和镜技术揭示其向错和取向矢图。
声明:以上、词性分类均由互联网资源自动生成,部分未经
审核,其表达内容亦不代表本软件的观点;若发现问题,欢迎向我们指正。
Because the distribution of molecular director was not affected by lamellar decorating after quench, chemical etching and SEM technique were used to reveal disclination and director patterns.
由于样品淬火后晶片装饰在织构上不影响分子
矢的分
,
可以用化学刻蚀
镜技术揭示其
错
矢图。
声明:以上例句、词性分类均由互联网资源自动生成,部分未经过人工审核,其表达内容亦不代表本软件的观点;若发现问题,欢迎我们指正。