In this study, gallium nitride nanowires were successfully grown on Silicon substrate using a simple resistive heated furnace, APCVD system, at room temperature.
发现镓材料上具有室温铁磁
的
质,被预期能运用
磁
记忆体的元件和积体电路的材料上。
In this study, gallium nitride nanowires were successfully grown on Silicon substrate using a simple resistive heated furnace, APCVD system, at room temperature.
发现镓材料上具有室温铁磁
的
质,被预期能运用
磁
记忆体的元件和积体电路的材料上。
In 2000 I started with nanobelts, white woollike products made by baking a metal oxide such as zinc in the presence of argon gas at 900 to 1,200 degrees Celsius, and with nanowires.
2000年,我便从奈米这种白色羊毛状的金属氧
物(像是让锌
900~1200℃的烘烤环境下与氩气作用)和奈米线开始著手。
声明:以上例句、词均由互联网资源自动生成,部
未经过人工审核,其表达内容亦不代表本软件的观点;若发现问题,欢迎向我们指正。
In this study, gallium nitride nanowires were successfully grown on Silicon substrate using a simple resistive heated furnace, APCVD system, at room temperature.
发现在氮化镓材料上具有室温铁磁性的性质,被预期能运用在磁性记忆体的元件体电路的材料上。
In 2000 I started with nanobelts, white woollike products made by baking a metal oxide such as zinc in the presence of argon gas at 900 to 1,200 degrees Celsius, and with nanowires.
2000年,我便从奈米这种白色羊毛状的金属氧化物(
锌在900~1200℃的烘烤环境下与氩气作用)
奈米线开始著手。
声明:以上例句、词性分类均由互联网资源自动生成,部分未经过人工审核,其表达内容亦不代表本软件的观点;若发现问题,欢迎向我们指正。
In this study, gallium nitride nanowires were successfully grown on Silicon substrate using a simple resistive heated furnace, APCVD system, at room temperature.
发现在氮化镓材料上具有室温铁磁,被预期能运用在磁
记忆体
元件和积体电路
材料上。
In 2000 I started with nanobelts, white woollike products made by baking a metal oxide such as zinc in the presence of argon gas at 900 to 1,200 degrees Celsius, and with nanowires.
2000年,我便从这种白色羊毛状
金属氧化物(像是让锌在900~1200℃
烘烤环境下与氩气作用)和
开始著手。
声明:以上例句、词分类均由互联网资源自动生成,部分未经过人工审核,其表达内容亦不代表本软件
观点;若发现问题,欢迎向我们指正。
In this study, gallium nitride nanowires were successfully grown on Silicon substrate using a simple resistive heated furnace, APCVD system, at room temperature.
发现氮化镓材料上具有室温铁
性的性质,被预期能运
性记忆体的元件和积体电路的材料上。
In 2000 I started with nanobelts, white woollike products made by baking a metal oxide such as zinc in the presence of argon gas at 900 to 1,200 degrees Celsius, and with nanowires.
2000年,我便从奈米这种白色羊毛状的金属氧化物(像是让锌
900~1200℃的烘烤环
氩气作
)和奈米线开始著手。
声明:以上例句、词性分类均由互联网资源自动生成,部分未经过人工审核,其表达内容亦不代表本软件的观点;若发现问题,欢迎向我们指正。
In this study, gallium nitride nanowires were successfully grown on Silicon substrate using a simple resistive heated furnace, APCVD system, at room temperature.
发现在氮料上具有室温铁磁
的
质,被预期能运用在磁
记忆体的元件和积体电路的
料上。
In 2000 I started with nanobelts, white woollike products made by baking a metal oxide such as zinc in the presence of argon gas at 900 to 1,200 degrees Celsius, and with nanowires.
2000年,我便从奈米这种白色羊毛状的金属氧
物(像是让锌在900~1200℃的烘烤环境下与氩气作用)和奈米线开始著手。
声明:以上例、词
分类均由互联网资源自动生成,部分未经过人工审核,其表达内容亦不代表本软件的观点;若发现问题,欢迎向我们指正。
In this study, gallium nitride nanowires were successfully grown on Silicon substrate using a simple resistive heated furnace, APCVD system, at room temperature.
氮化镓材料上具有室温铁磁性的性质,被预期能运用
磁性记忆体的元件和积体电路的材料上。
In 2000 I started with nanobelts, white woollike products made by baking a metal oxide such as zinc in the presence of argon gas at 900 to 1,200 degrees Celsius, and with nanowires.
2000年,我便从奈米这种白色羊毛状的金属氧化物(像是让锌
900~1200℃的烘烤环境下与氩气作用)和奈米线开始著手。
声明:以上例句、词性分互联网资源自动生成,部分未经过人工审核,其表达内容亦不代表本软件的观点;若
问题,欢迎向我们指正。
In this study, gallium nitride nanowires were successfully grown on Silicon substrate using a simple resistive heated furnace, APCVD system, at room temperature.
发现在氮化镓材料上具有室温铁磁性的性质,被预期能运用在磁性记忆体的元件和积体电路的材料上。
In 2000 I started with nanobelts, white woollike products made by baking a metal oxide such as zinc in the presence of argon gas at 900 to 1,200 degrees Celsius, and with nanowires.
2000年,奈米
这种
毛状的金属氧化物(像是让锌在900~1200℃的烘烤环境下与氩气作用)和奈米线开始著手。
声明:以上例句、词性分类均由互联网资源自动生成,部分未经过人工审核,其表达内容亦不代表本软件的观点;若发现问题,欢迎向们指正。
In this study, gallium nitride nanowires were successfully grown on Silicon substrate using a simple resistive heated furnace, APCVD system, at room temperature.
发现在氮化镓材料上具有铁磁性的性质,被预期能运用在磁性记忆体的元件和积体电路的材料上。
In 2000 I started with nanobelts, white woollike products made by baking a metal oxide such as zinc in the presence of argon gas at 900 to 1,200 degrees Celsius, and with nanowires.
2000年,我便从奈米这种白色羊毛状的金属氧化物(像是让锌在900~1200℃的烘烤环境下与氩气作用)和奈米线开始著手。
:以上例句、词性分类均由互联网资源自动生成,部分未经过人工审核,其表达内容亦不代表本软件的观点;若发现问题,欢迎向我们指正。
In this study, gallium nitride nanowires were successfully grown on Silicon substrate using a simple resistive heated furnace, APCVD system, at room temperature.
发现在材料上具有室温铁磁
的
质,被预期能运用在磁
记忆体的元件和积体电路的材料上。
In 2000 I started with nanobelts, white woollike products made by baking a metal oxide such as zinc in the presence of argon gas at 900 to 1,200 degrees Celsius, and with nanowires.
2000年,我便从奈米这种白色羊毛状的金属氧
物(像是让锌在900~1200℃的烘烤环境下与氩气作用)和奈米线开始著手。
声明:以上例句、词类均由互联网资源自动生成,部
未经过人工审核,其表达内容亦不代表本软件的观点;若发现问题,欢迎向我们指正。