Furthermore, the authors observe the high gettering efficiency of Au to void in ragged backside of diodes.

注量的氦注入硅中并经热处理所形成的微孔,对金属原子的吸除作已为大量的研究所证实。

Finally, wirebonding technics in the retral packaging of Schottky power diodes is optimized by orthogonal experiment design.

最交试验的方法对肖特基器件部封装中的压焊工艺进行了参数优化设计。

The tunnel diode monostable circuit with non-linear biasing plays an important role in millimicrosecond pulse techniques.

非线性偏置隧道二极管单稳线路,在毫微秒脉冲技术中有广阔的应前途。

The diode intrinsic noise temperature of some milimeter Schottky mixer diode was measured and reviewed. A measurement method was described at room and cooled temperature.

本对一些毫米波肖特基势混频二极管本征噪声温度进行了测试和分析。介绍了在常温和致冷下混频二极管本征噪声的测试方法。

Depth of field: with prqactices diode system (IDS), high-capacity ensures that the depth of field in the production of reliable. Autocompensation printing plate surface unevenness.

有了智能化的二极管系（IDS），深的能力保证了生产的可靠进行。自动补偿印版表面的不均匀度。

Quantum well intermixing induced by impurity diffusion has been used in fabricating nonabsorbing windows in the cavity facets to improve the output power of high-power laser diodes.

杂质扩散诱导量子阱混杂技术可于制作腔面非吸收窗口, 提大功率半导体激光器的输出功率。

This paper shows that under certain conditons it is possible to diminish and even eliminate the nonlinear distorsion of a peak envelope detector by biasing the diode adequately.

本对一般所谓惰性失真和切削失真同时分析讨论而获得一公式,并且发现对二极管加适当的偏压可以减小或消除失真。

The leakage of the 1N3595 diode is generally less than one picoampere even with 1mV of forward bias, so the circuit won't interfere with measurements of 10pA or more.

即使在1mV的向偏置之下，1N3595的漏电流一般会小于1皮安，此电路不会影响10pA或更大电流的测量。

Furthermore, the authors observe the high gettering efficiency of Au to void in ragged backside of diodes.

高注量的氦注入硅中并经热处理所形成的微孔,对金属原子的吸除作已为大量的研究所证实。

Finally, wirebonding technics in the retral packaging of Schottky power diodes is optimized by orthogonal experiment design.

最后正交试验的方法对肖特基器件后部封装中的压焊工艺进行了参数优化设计。

The tunnel diode monostable circuit with non-linear biasing plays an important role in millimicrosecond pulse techniques.

非线性偏置隧道二极管单稳线路,在微秒脉冲技术中有广阔的途。

The diode intrinsic noise temperature of some milimeter Schottky mixer diode was measured and reviewed. A measurement method was described at room and cooled temperature.

本对一波肖特基势混频二极管本征噪声温度进行了测试和分析。介绍了在常温和致冷下混频二极管本征噪声的测试方法。

Depth of field: with prqactices diode system (IDS), high-capacity ensures that the depth of field in the production of reliable. Autocompensation printing plate surface unevenness.

有了智能化的二极管系统（IDS），高景深的能力保证了生产的可靠进行。自动补偿印版表面的不均匀度。

Quantum well intermixing induced by impurity diffusion has been used in fabricating nonabsorbing windows in the cavity facets to improve the output power of high-power laser diodes.

杂质扩散诱导量子阱混杂技术可于制作腔面非吸收窗口, 提高大功率半导体激光器的输出功率。

This paper shows that under certain conditons it is possible to diminish and even eliminate the nonlinear distorsion of a peak envelope detector by biasing the diode adequately.

本对一般所谓惰性失真和切削失真同时分析讨论而获得统一公式,并且发现对二极管加适当的正偏压可以减小或消除失真。

The leakage of the 1N3595 diode is generally less than one picoampere even with 1mV of forward bias, so the circuit won't interfere with measurements of 10pA or more.

即使在1mV的正向偏置之下，1N3595的漏电流一般会小于1皮安，此电路不会影响10pA或更大电流的测量。

Furthermore, the authors observe the high gettering efficiency of Au to void in ragged backside of diodes.

高注量的氦注入硅中并经热处理所形成的微孔,原子的吸除作用已为大量的研究所证实。

Finally, wirebonding technics in the retral packaging of Schottky power diodes is optimized by orthogonal experiment design.

最后用正交试验的方法肖特基器件后部封装中的压焊工艺进行了参数优化设计。

The tunnel diode monostable circuit with non-linear biasing plays an important role in millimicrosecond pulse techniques.

非线性偏置隧道二极管单稳线路,在毫微秒脉冲技术中有广阔的应用前途。

The diode intrinsic noise temperature of some milimeter Schottky mixer diode was measured and reviewed. A measurement method was described at room and cooled temperature.

本一些毫米波肖特基势混频二极管本征噪声温度进行了测试和分析。介绍了在常温和致冷下混频二极管本征噪声的测试方法。

Depth of field: with prqactices diode system (IDS), high-capacity ensures that the depth of field in the production of reliable. Autocompensation printing plate surface unevenness.

有了智能化的二极管系统（IDS），高景深的能力保证了生产的可靠进行。自动补偿版面的不均匀度。

Quantum well intermixing induced by impurity diffusion has been used in fabricating nonabsorbing windows in the cavity facets to improve the output power of high-power laser diodes.

杂质扩散诱导量子阱混杂技术可用于制作腔面非吸收窗口, 提高大功率半导体激光器的输出功率。

This paper shows that under certain conditons it is possible to diminish and even eliminate the nonlinear distorsion of a peak envelope detector by biasing the diode adequately.

本一般所谓惰性失真和切削失真同时分析讨论而获得统一公式,并且发现二极管加适当的正偏压可以减小或消除失真。

The leakage of the 1N3595 diode is generally less than one picoampere even with 1mV of forward bias, so the circuit won't interfere with measurements of 10pA or more.

即使在1mV的正向偏置之下，1N3595的漏电流一般会小于1皮安，此电路不会影响10pA或更大电流的测量。

Furthermore, the authors observe the high gettering efficiency of Au to void in ragged backside of diodes.

高注量的氦注入硅中并经热处理所形成的微孔,对金属原子的吸除用已为大量的研究所证实。

Finally, wirebonding technics in the retral packaging of Schottky power diodes is optimized by orthogonal experiment design.

最后用正交试验的方法对肖特基器件后部封装中的压焊工艺进行了参数优化设计。

The tunnel diode monostable circuit with non-linear biasing plays an important role in millimicrosecond pulse techniques.

非线性偏置隧道二极单稳线路,在毫微秒脉冲技术中有广阔的应用前途。

The diode intrinsic noise temperature of some milimeter Schottky mixer diode was measured and reviewed. A measurement method was described at room and cooled temperature.

本对一些毫米波肖特基势混频二极本征噪声温度进行了测试和分析。介绍了在常温和致冷下混频二极本征噪声的测试方法。

Depth of field: with prqactices diode system (IDS), high-capacity ensures that the depth of field in the production of reliable. Autocompensation printing plate surface unevenness.

有了智能化的二极系统（IDS），高景深的能力保证了生产的可靠进行。自动补偿印版表的不均匀度。

Quantum well intermixing induced by impurity diffusion has been used in fabricating nonabsorbing windows in the cavity facets to improve the output power of high-power laser diodes.

杂质扩散诱导量子阱混杂技术可用于制非吸收窗口, 提高大功率半导体激光器的输出功率。

This paper shows that under certain conditons it is possible to diminish and even eliminate the nonlinear distorsion of a peak envelope detector by biasing the diode adequately.

本对一般所谓惰性失真和切削失真同时分析讨论而获得统一公式,并且发现对二极加适当的正偏压可以减小或消除失真。

The leakage of the 1N3595 diode is generally less than one picoampere even with 1mV of forward bias, so the circuit won't interfere with measurements of 10pA or more.

即使在1mV的正向偏置之下，1N3595的漏电流一般会小于1皮安，此电路不会影响10pA或更大电流的测量。

Furthermore, the authors observe the high gettering efficiency of Au to void in ragged backside of diodes.

高注的氦注入经热处理所形成的微孔,对金属原子的吸除作用已为大的研究所证实。

Finally, wirebonding technics in the retral packaging of Schottky power diodes is optimized by orthogonal experiment design.

最后用正交试验的方法对肖特基器件后部封装的压焊工艺进行了参数优化设计。

The tunnel diode monostable circuit with non-linear biasing plays an important role in millimicrosecond pulse techniques.

非线性偏置隧道二极管单稳线路,在毫微秒脉冲技术有广阔的应用前途。

The diode intrinsic noise temperature of some milimeter Schottky mixer diode was measured and reviewed. A measurement method was described at room and cooled temperature.

本对一些毫米波肖特基势混频二极管本征噪声温度进行了测试和分析。介绍了在常温和致冷下混频二极管本征噪声的测试方法。

Depth of field: with prqactices diode system (IDS), high-capacity ensures that the depth of field in the production of reliable. Autocompensation printing plate surface unevenness.

有了智能化的二极管系统（IDS），高景深的能力保证了生产的可靠进行。自动补偿印版表面的不均匀度。

Quantum well intermixing induced by impurity diffusion has been used in fabricating nonabsorbing windows in the cavity facets to improve the output power of high-power laser diodes.

杂质扩散子阱混杂技术可用于制作腔面非吸收窗口, 提高大功率半体激光器的输出功率。

This paper shows that under certain conditons it is possible to diminish and even eliminate the nonlinear distorsion of a peak envelope detector by biasing the diode adequately.

本对一般所谓惰性失真和切削失真同时分析讨论而获得统一公式,且发现对二极管加适当的正偏压可以减小或消除失真。

The leakage of the 1N3595 diode is generally less than one picoampere even with 1mV of forward bias, so the circuit won't interfere with measurements of 10pA or more.

即使在1mV的正向偏置之下，1N3595的漏电流一般会小于1皮安，此电路不会影响10pA或更大电流的测。

Furthermore, the authors observe the high gettering efficiency of Au to void in ragged backside of diodes.

高注量氦注入硅中并经热处理所微孔,对金属原子吸除作用已为大量研究所证实。

Finally, wirebonding technics in the retral packaging of Schottky power diodes is optimized by orthogonal experiment design.

最后用正交试验方法对肖特基器件后部封装中压焊工艺进行了参数优化设计。

The tunnel diode monostable circuit with non-linear biasing plays an important role in millimicrosecond pulse techniques.

非线性偏置隧道二极管单稳线路,在毫微秒脉冲技术中有广阔应用前途。

The diode intrinsic noise temperature of some milimeter Schottky mixer diode was measured and reviewed. A measurement method was described at room and cooled temperature.

本对一些毫米波肖特基势混频二极管本征噪声温度进行了测试和分析。介绍了在常温和致冷下混频二极管本征噪声测试方法。

Depth of field: with prqactices diode system (IDS), high-capacity ensures that the depth of field in the production of reliable. Autocompensation printing plate surface unevenness.

有了智能化二极管系统（IDS），高景深能力保证了生产可靠进行。自动补偿印版表面度。

Quantum well intermixing induced by impurity diffusion has been used in fabricating nonabsorbing windows in the cavity facets to improve the output power of high-power laser diodes.

杂质扩散诱导量子阱混杂技术可用于制作腔面非吸收窗口, 提高大功率半导体激光器输出功率。

This paper shows that under certain conditons it is possible to diminish and even eliminate the nonlinear distorsion of a peak envelope detector by biasing the diode adequately.

本对一般所谓惰性失真和切削失真同时分析讨论而获得统一公式,并且发现对二极管加适当正偏压可以减小或消除失真。

The leakage of the 1N3595 diode is generally less than one picoampere even with 1mV of forward bias, so the circuit won't interfere with measurements of 10pA or more.

即使在1mV正向偏置之下，1N3595漏电流一般会小于1皮安，此电路会影响10pA或更大电流测量。

Furthermore, the authors observe the high gettering efficiency of Au to void in ragged backside of diodes.

高注量的氦注入硅中并经热处理所形成的微孔,对金属原子的除作用已为大量的研究所证实。

Finally, wirebonding technics in the retral packaging of Schottky power diodes is optimized by orthogonal experiment design.

最后用正交试验的方法对肖特基器件后部封装中的压焊工艺进行了参数优化设计。

The tunnel diode monostable circuit with non-linear biasing plays an important role in millimicrosecond pulse techniques.

非线性偏置隧道极管单稳线路,在毫微秒脉冲技术中有广阔的应用前途。

The diode intrinsic noise temperature of some milimeter Schottky mixer diode was measured and reviewed. A measurement method was described at room and cooled temperature.

本对一些毫米波肖特基势混频极管本征噪声温度进行了测试和分析。介绍了在常温和致冷下混频极管本征噪声的测试方法。

Depth of field: with prqactices diode system (IDS), high-capacity ensures that the depth of field in the production of reliable. Autocompensation printing plate surface unevenness.

有了智能化的极管系统（IDS），高景深的能力保证了生产的可靠进行。自动补偿印版表面的不均匀度。

Quantum well intermixing induced by impurity diffusion has been used in fabricating nonabsorbing windows in the cavity facets to improve the output power of high-power laser diodes.

杂质扩散诱导量子阱混杂技术可用于制作腔面非口, 提高大功率半导体激光器的输出功率。

This paper shows that under certain conditons it is possible to diminish and even eliminate the nonlinear distorsion of a peak envelope detector by biasing the diode adequately.

本对一般所谓惰性失真和切削失真同时分析讨论而获得统一公式,并且发现对极管加适当的正偏压可以减小或消除失真。

The leakage of the 1N3595 diode is generally less than one picoampere even with 1mV of forward bias, so the circuit won't interfere with measurements of 10pA or more.

即使在1mV的正向偏置之下，1N3595的漏电流一般会小于1皮安，此电路不会影响10pA或更大电流的测量。

Furthermore, the authors observe the high gettering efficiency of Au to void in ragged backside of diodes.

高注量氦注入硅并经热处理所形成微孔,对金属原子吸除作用已为大量研究所证实。

Finally, wirebonding technics in the retral packaging of Schottky power diodes is optimized by orthogonal experiment design.

最后用正交试验方法对肖特基器件后部封压焊工艺进行了参数优化设计。

The tunnel diode monostable circuit with non-linear biasing plays an important role in millimicrosecond pulse techniques.

非线性偏置隧道二极管单稳线路,在毫微秒脉冲技术有广阔应用前途。

The diode intrinsic noise temperature of some milimeter Schottky mixer diode was measured and reviewed. A measurement method was described at room and cooled temperature.

本对一些毫米波肖特基势混频二极管本温度进行了测试和分析。介绍了在常温和致冷下混频二极管本测试方法。

Depth of field: with prqactices diode system (IDS), high-capacity ensures that the depth of field in the production of reliable. Autocompensation printing plate surface unevenness.

有了智能化二极管系统（IDS），高景深能力保证了生产可靠进行。自动补偿印版表面不均匀度。

Quantum well intermixing induced by impurity diffusion has been used in fabricating nonabsorbing windows in the cavity facets to improve the output power of high-power laser diodes.

杂质扩散诱导量子阱混杂技术可用于制作腔面非吸收窗口, 提高大功率半导体激光器输出功率。

This paper shows that under certain conditons it is possible to diminish and even eliminate the nonlinear distorsion of a peak envelope detector by biasing the diode adequately.

本对一般所谓惰性失真和切削失真同时分析讨论而获得统一公式,并且发现对二极管加适当正偏压可以减小或消除失真。

The leakage of the 1N3595 diode is generally less than one picoampere even with 1mV of forward bias, so the circuit won't interfere with measurements of 10pA or more.

即使在1mV正向偏置之下，1N3595漏电流一般会小于1皮安，此电路不会影响10pA或更大电流测量。

Furthermore, the authors observe the high gettering efficiency of Au to void in ragged backside of diodes.

高注量氦注入硅中并经热处理所形成微孔,对金属原子吸除作用已为大量研究所证。

Finally, wirebonding technics in the retral packaging of Schottky power diodes is optimized by orthogonal experiment design.

用正交试验方法对肖特基器件部封装中压焊工艺进行了参数优化设计。

The tunnel diode monostable circuit with non-linear biasing plays an important role in millimicrosecond pulse techniques.

非线性偏置隧道二极管单稳线路,在毫微秒脉冲技术中有广阔应用前途。

The diode intrinsic noise temperature of some milimeter Schottky mixer diode was measured and reviewed. A measurement method was described at room and cooled temperature.

本对一些毫米波肖特基势混频二极管本征噪声温度进行了测试和分析。介绍了在常温和致冷下混频二极管本征噪声测试方法。

Depth of field: with prqactices diode system (IDS), high-capacity ensures that the depth of field in the production of reliable. Autocompensation printing plate surface unevenness.

有了智能化二极管系统（IDS），高能力保证了生产可靠进行。自动补偿印版表面不均匀度。

Quantum well intermixing induced by impurity diffusion has been used in fabricating nonabsorbing windows in the cavity facets to improve the output power of high-power laser diodes.

杂质扩散诱导量子阱混杂技术可用于制作腔面非吸收窗口, 提高大功率半导体激光器输出功率。

This paper shows that under certain conditons it is possible to diminish and even eliminate the nonlinear distorsion of a peak envelope detector by biasing the diode adequately.

本对一般所谓惰性失真和切削失真同时分析讨论而获得统一公式,并且发现对二极管加适当正偏压可以减小或消除失真。

The leakage of the 1N3595 diode is generally less than one picoampere even with 1mV of forward bias, so the circuit won't interfere with measurements of 10pA or more.

即使在1mV正向偏置之下，1N3595漏电流一般会小于1皮安，此电路不会影响10pA或更大电流测量。