An innovation for prevention latchup,pseudo-latchup path method,has been put forward that is based on latchup effects of bulk-Si CMOS devices.
从体硅CMOS器件
闭
效应入手,提出了抑制闭一种新方法—伪闭路
法。
n. 互补金属氧化物半导体
95 Abstract With the rapid development of the IC manufacture, the critical dimension(CD) of the manufacturable CMOS technology has been put into 90nm, even 65nm and below from 130nm.
摘 要 随着IC制造技
快速发展，可量产CMOS技，
征线宽也由0.13um 进入了90nm甚至65nm及以下。
声明：以上例句、词性分类均由互联网资源自动生成，部分未经过人工审核，
表达内容亦不代表本软件
观点；若发现问题，欢迎向我们指正。
用户正在搜索
imperturbed, imperviable, impervious, imperviously, imperviousness, impetiginization, impetiginous, impetigo, impetrate, impetuosity,
相似单词
CMMI, CMMS, CMMSSA, CMN, CMO, CMOS, CMOSIC, CMP, cmpd, cmpl,
n. 互补金属氧化物半导体
An innovation for prevention latchup,pseudo-latchup path method,has been put forward that is based on latchup effects of bulk-Si CMOS devices.
从体硅CMOS器件闭锁效应入手,提出了抑制闭锁一种新方法—伪闭锁路径法。
95 Abstract With the rapid development of the IC manufacture, the critical dimension(CD) of the manufacturable CMOS technology has been put into 90nm, even 65nm and below from 130nm.
摘 要 随着IC制造技术快速发展，可量产CMOS技术，其特征线宽也由0.13um 进入了90nm甚至65nm及以下。
声明：以上
、词性分类均由互联网
动生成，部分未经过人工审核，其表达内容亦不代表本软件观点；若发现问题，欢迎向我们指正。
用户正在搜索
impinge on, impingement, impingementcorrosion, impinger, impinging, impious, impiously, impish, impishly, impitoyable,
相似单词
CMMI, CMMS, CMMSSA, CMN, CMO, CMOS, CMOSIC, CMP, cmpd, cmpl,
n. 互补金属氧化物半导体
An innovation for prevention latchup,pseudo-latchup path method,has been put forward that is based on latchup effects of bulk-Si CMOS devices.
从体硅CMOS器件闭锁效应入手,提出了抑制闭锁一种新方法—伪闭锁路径法。
95 Abstract With the rapid development of the IC manufacture, the critical dimension(CD) of the manufacturable CMOS technology has been put into 90nm, even 65nm and below from 130nm.
摘 要 随着IC制造技术快速发展，可量产CMOS技术，其特征线宽也由0.13um 进入了90nm甚至65nm及以下。
声明：以上、词性分类均由互联
自动生成，部分未经过人工审核，其表达内容亦不代表本软件观点；若发现问题，欢迎向我们指正。
用户正在搜索
implastic, implausibility, implausible, implausibly, implead, impleadable, impledge, implement, implemental, implementary,
相似单词
CMMI, CMMS, CMMSSA, CMN, CMO, CMOS, CMOSIC, CMP, cmpd, cmpl,
n. 互补金属氧化物半导体
An innovation for prevention latchup,pseudo-latchup path method,has been put forward that is based on latchup effects of bulk-Si CMOS devices.
从体硅CMOS器件闭锁效应入手,提
制闭锁一种新方法—伪闭锁路径法。
95 Abstract With the rapid development of the IC manufacture, the critical dimension(CD) of the manufacturable CMOS technology has been put into 90nm, even 65nm and below from 130nm.
摘 要 随着IC制造技术快速发展，可量产CMOS技术，其特征线宽也由0.13um 进入90nm甚至65nm及
。
明：
上例句、词性分类均由互联网资源自动生成，部分未经过人工审核，其表达内容亦不代表本软件观点；若发现问题，欢迎向我们指正。
用户正在搜索
implicitly, implicity, implied, impliedly, implode, imploder, imploding, imploit, imploiter, imploration,
相似单词
CMMI, CMMS, CMMSSA, CMN, CMO, CMOS, CMOSIC, CMP, cmpd, cmpl,
n. 互补金属氧化物半导体
An innovation for prevention latchup,pseudo-latchup path method,has been put forward that is based on latchup effects of bulk-Si CMOS devices.
从体硅CMOS器件闭效应入手,提出了抑制闭一种新方法—伪闭路法。
95 Abstract With the rapid development of the IC manufacture, the critical dimension(CD) of the manufacturable CMOS technology has been put into 90nm, even 65nm and below from 130nm.
摘 要 随着IC制造技快速发展，可量产CMOS技，征线宽也由0.13um 进入了90nm甚至65nm及以下。
声明：以上例句、词性分类均由互联网资源自动生成，部分未经过人工审核，表达内容亦不代表本软件观点；若发现问题，欢迎向我们指正。
用户正在搜索
impolite, impolitely, impoliteness, impolitic, impolitical, impoliticly, imponderabilia, imponderability, imponderable, imponderableness,
相似单词
CMMI, CMMS, CMMSSA, CMN, CMO, CMOS, CMOSIC, CMP, cmpd, cmpl,
用户正在搜索
improvisatrice, improvise, improviser, improvvisatore, improvvisatrice, imprudence, imprudent, imprudently, IMPS, impsonite,
相似单词
CMMI, CMMS, CMMSSA, CMN, CMO, CMOS, CMOSIC, CMP, cmpd, cmpl,
用户正在搜索
in combination with, in common, in concert, in conclusion, in condition, in conjunction with, in consequence, in consequence of, in constant motion, in contact with,
相似单词
CMMI, CMMS, CMMSSA, CMN, CMO, CMOS, CMOSIC, CMP, cmpd, cmpl,
n. 互补金属氧化物半导体
An innovation for prevention latchup,pseudo-latchup path method,has been put forward that is based on latchup effects of bulk-Si CMOS devices.
从体硅CMOS器件闭效应
手,提出抑制闭
种新方法—伪闭路径法。
95 Abstract With the rapid development of the IC manufacture, the critical dimension(CD) of the manufacturable CMOS technology has been put into 90nm, even 65nm and below from 130nm.
摘 要 随着IC制造技术快速发展，可量产CMOS技术，其特征线宽也由0.13um 进90nm
至65nm及以下。
声明：以上例句、词性分类均由互联网资源自动生成，部分未经过人工审核，其表达内容亦不代表本软件观点；若发现问题，欢迎向我们指正。
用户正在搜索
in detail, in difficulties, in dispute, in doing so, in due course, in due time, in earnest, in effect, in english, in equity,
相似单词
CMMI, CMMS, CMMSSA, CMN, CMO, CMOS, CMOSIC, CMP, cmpd, cmpl,
n. 互补金属氧
导体
导体An innovation for prevention latchup,pseudo-latchup path method,has been put forward that is based on latchup effects of bulk-Si CMOS devices.
从体硅CMOS器件闭锁效应入手,提出了抑制闭锁一种新方法—伪闭锁路径法。
95 Abstract With the rapid development of the IC manufacture, the critical dimension(CD) of the manufacturable CMOS technology has been put into 90nm, even 65nm and below from 130nm.
摘 要 随着IC制造技术快速发展，可量产CMOS技术，其特征线宽也由0.13um 进入了90nm甚至65nm及以下。
声明：以上例句、词性
类均由互联网资源自动生成，
经过人工审核，其表达内容亦不代表本软件观点；若发现问题，欢迎向我们指正。
用户正在搜索
in force, in front, in front of, in full bloom, in full charge, in full swing, in future, in general, in good order, in good repair,
相似单词
CMMI, CMMS, CMMSSA, CMN, CMO, CMOS, CMOSIC, CMP, cmpd, cmpl,
n. 互补金属氧化物半导体
An innovation for prevention latchup,pseudo-latchup path method,has been put forward that is based on latchup effects of bulk-Si CMOS devices.
从体硅CMOS器件闭锁效应入手,提出了抑制闭锁一种新方法—伪闭锁路径法。
95 Abstract With the rapid development of the IC manufacture, the critical dimension(CD) of the manufacturable CMOS technology has been put into 90nm, even 65nm and below from 130nm.
摘 要 随着IC制造技术快速发展，可量产CMOS技术，其特征线宽也由0.13um 进入了90nm甚至65nm及以下。
声明：以上、词性分类均由互联自动生成，部分未经过人工审核，其表达内容亦不代表本软件观点；若发现问题，欢迎向我们指正。
用户正在搜索
in itself, in kind, in large measure, in large quantities, in life, in limine, in line, in line for, in line with, in line wtih,
相似单词
CMMI, CMMS, CMMSSA, CMN, CMO, CMOS, CMOSIC, CMP, cmpd, cmpl,
n. 互补金属氧化物半导体
An innovation for prevention latchup,pseudo-latchup path method,has been put forward that is based on latchup effects of bulk-Si CMOS devices.
从体硅CMOS器件闭锁效应入手,提出了抑
闭锁一种新方法—伪闭锁路径法。
95 Abstract With the rapid development of the IC manufacture, the critical dimension(CD) of the manufacturable CMOS technology has been put into 90nm, even 65nm and below from 130nm.
摘 要 随着IC
术快
，可量产CMOS术，其特征线宽也由0.13um 进入了90nm甚至65nm及以下。
声明：以上例句、词性分类均由互联网资源自动生成，部分未经过人工审核，其表达内容亦不代表本软件观点；若
现问题，欢迎向我们指正。
用户正在搜索
in one, in oneself, in operation, in order, in order that, in order to, in other words, in part, in particular, in passing,
相似单词
CMMI, CMMS, CMMSSA, CMN, CMO, CMOS, CMOSIC, CMP, cmpd, cmpl,