An innovation for prevention latchup,pseudo-latchup path method,has been put forward that is based on latchup effects of bulk-Si CMOS devices.
从体硅CMOS
件
闭锁效应入手,提出了抑制闭锁一种新方法—伪闭锁路径法。
n. 互补金属氧化物半导体
95 Abstract With the rapid development of the IC manufacture, the critical dimension(CD) of the manufacturable CMOS technology has been put into 90nm, even 65nm and below from 130nm.
摘 要 随着IC制造技术快速发展，可量产CMOS技术，其特征线宽也由0.13um 进入了90nm甚至65nm及以下。
声明：以上例句、词性
由互联网资源自动生成，部未经过人工审核，其表达内容亦不代表本软件
观点；若发现问题，欢迎向我们指正。
用户正在搜索
after damp, after effect, after hours, after image, after school, afteracceleration, after-action, after-admission, afterall, after-bake,
相似单词
CMMI, CMMS, CMMSSA, CMN, CMO, CMOS, CMOSIC, CMP, cmpd, cmpl,
n. 互补金属氧化物半导体
An innovation for prevention latchup,pseudo-latchup path method,has been put forward that is based on latchup effects of bulk-Si CMOS devices.
从体硅CMOS器件闭锁效应入手,提出了抑制闭锁一种新方法—伪闭锁路径法。
95 Abstract With the rapid development of the IC manufacture, the critical dimension(CD) of the manufacturable CMOS technology has been put into 90nm, even 65nm and below from 130nm.
摘 要 随着IC制造技术快速发展，可量产CMOS技术，其特征线宽也由0.13um 进入了90nm甚至65nm及以下。
声明：以上例句、词性分类均由互联网资源自动生成，部分未经过人工审核，其表
亦不代表本软件观点；若发现问题，欢迎向我们指正。
用户正在搜索
after-current, after-cut, afterdamp, afterdeck, after-depolarization, afterdinner, after-dinner, afterdischarge, after-discharge, afterdrying,
相似单词
CMMI, CMMS, CMMSSA, CMN, CMO, CMOS, CMOSIC, CMP, cmpd, cmpl,
n. 互补金属氧化物半导体
An innovation for prevention latchup,pseudo-latchup path method,has been put forward that is based on latchup effects of bulk-Si CMOS devices.
从体硅CMOS器件闭锁效应入手,提出了抑制闭锁一种新方法—伪闭锁路径法。
95 Abstract With the rapid development of the IC manufacture, the critical dimension(CD) of the manufacturable CMOS technology has been put into 90nm, even 65nm and below from 130nm.
摘 要 随着IC制造技术快速发展，可量产CMOS技术，其特征线宽也由0.13um 进入了90nm甚至65nm及以下。
声明：以上
、词性分类均由互联网
动生成，部分未经过人工审核，其表达内容亦不代表本软件观点；若发现问题，欢迎向我们指正。
用户正在搜索
afterflaming, afterflow, afterframe, aftergases, afterglow, after-glowtube, aftergrass, aftergrowth, after-hardening, after-hearing,
相似单词
CMMI, CMMS, CMMSSA, CMN, CMO, CMOS, CMOSIC, CMP, cmpd, cmpl,
n. 互补金属氧化物半导体
An innovation for prevention latchup,pseudo-latchup path method,has been put forward that is based on latchup effects of bulk-Si CMOS devices.
从体硅CMOS器件闭锁效应入手,提出了抑制闭锁一种新方法—伪闭锁路径法。
95 Abstract With the rapid development of the IC manufacture, the critical dimension(CD) of the manufacturable CMOS technology has been put into 90nm, even 65nm and below from 130nm.
摘 要 随着IC制造技术快速发展，可量产CMOS技术，其特征线宽也由0.13um 进入了90nm甚至65nm及以下。
声明：以上、词性分类均由互联
自动生成，部分未经过人工审核，其表达内容亦不代表本软件观点；若发现问题，欢迎向我们指正。
用户正在搜索
afterproduct, afterpulse, after-purification, afterripening, after-ripening, afters, aftersales, afterschool, aftersensation, after-sensation,
相似单词
CMMI, CMMS, CMMSSA, CMN, CMO, CMOS, CMOSIC, CMP, cmpd, cmpl,
n. 互补金属氧化物半导体
An innovation for prevention latchup,pseudo-latchup path method,has been put forward that is based on latchup effects of bulk-Si CMOS devices.
从体硅CMOS器件闭
效应入手,提出了抑制闭一种新方法—伪闭路
法。
95 Abstract With the rapid development of the IC manufacture, the critical dimension(CD) of the manufacturable CMOS technology has been put into 90nm, even 65nm and below from 130nm.
摘 要 随着IC制造技
快速发展，可量产CMOS技，
征线宽也由0.13um 进入了90nm甚至65nm及以下。
声明：以上例句、词性分类均由互联网资源自动生成，部分未经过人工审核，
表达内容亦不代表本软件观点；若发现问题，欢迎向我们指正。
用户正在搜索
aftertack, after-tack, aftertaste, aftertax, afterteeming, afterthought, aftertime, aftertossing, aftertreatment, after-vision,
相似单词
CMMI, CMMS, CMMSSA, CMN, CMO, CMOS, CMOSIC, CMP, cmpd, cmpl,
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agaric, Agaricaceae, agaricaceous, Agaricales, agaricin, agaricol, agaricology, agarics, agaricus, agarin,
相似单词
CMMI, CMMS, CMMSSA, CMN, CMO, CMOS, CMOSIC, CMP, cmpd, cmpl,
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Agatha Christie, agathin, agatize, Agavaceae, agave, agavose, agaze, agazed, AGB, AGC,
相似单词
CMMI, CMMS, CMMSSA, CMN, CMO, CMOS, CMOSIC, CMP, cmpd, cmpl,
n. 互补金属氧化物半导体
An innovation for prevention latchup,pseudo-latchup path method,has been put forward that is based on latchup effects of bulk-Si CMOS devices.
从体硅CMOS器件闭锁效应入手,提出了抑制闭锁一种新方法—伪闭锁路径法。
95 Abstract With the rapid development of the IC manufacture, the critical dimension(CD) of the manufacturable CMOS technology has been put into 90nm, even 65nm and below from 130nm.
摘 要 随着IC制造技术快速发展，可量产CMOS技术，其特征线宽也由0.13um 进入了90nm甚至65nm及以下。
声明：以上例句、词性分类均由互联网资源自动生成，部分未经过人工审核，其表亦不代表本软件观点；若发现问题，欢迎向我们指正。
用户正在搜索
age of reason, age-bracket, aged, age-deposition, age-distribution, agedly, agedness, aged-ram, agee, age-grade,
相似单词
CMMI, CMMS, CMMSSA, CMN, CMO, CMOS, CMOSIC, CMP, cmpd, cmpl,
n. 互补金属氧化物半导体
An innovation for prevention latchup,pseudo-latchup path method,has been put forward that is based on latchup effects of bulk-Si CMOS devices.
从体硅CMOS器件闭锁效应入手,提出了抑制闭锁一种新方法—伪闭锁路径法。
95 Abstract With the rapid development of the IC manufacture, the critical dimension(CD) of the manufacturable CMOS technology has been put into 90nm, even 65nm and below from 130nm.
摘 要 随着IC制造技术快速发展，可量产CMOS技术，其特征线宽也由0.13um 进入了90nm甚至65nm及以下。
声明：以上、词性分类均由互联自动生成，部分未经过人工审核，其表达内容亦不代表本软件观点；若发现问题，欢迎向我们指正。
用户正在搜索
agendas, agendum, Agene, agenesia, agenesis, agenize, Agenois, agent, agent bank, Agent Orange,
相似单词
CMMI, CMMS, CMMSSA, CMN, CMO, CMOS, CMOSIC, CMP, cmpd, cmpl,
n. 互补金属氧化物半导体
An innovation for prevention latchup,pseudo-latchup path method,has been put forward that is based on latchup effects of bulk-Si CMOS devices.
从体硅CMOS器件闭锁效应入手,提出了抑
闭锁一种新方法—伪闭锁路径法。
95 Abstract With the rapid development of the IC manufacture, the critical dimension(CD) of the manufacturable CMOS technology has been put into 90nm, even 65nm and below from 130nm.
摘 要 随着IC
术快
，可量产CMOS术，其特征线宽也由0.13um 进入了90nm甚至65nm及以下。
声明：以上例句、词性分类均由互联网资源自动生成，部分未经过人工审核，其表达内容亦不代表本软件观点；若
现问题，欢迎向我们指正。
用户正在搜索
ager, agerasia, ageratochromene, ageratum, Agere, age-table, ageusia, ageustia, Agfa, Agfacolour,
相似单词
CMMI, CMMS, CMMSSA, CMN, CMO, CMOS, CMOSIC, CMP, cmpd, cmpl,
n. 互补金属氧化物半导体
An innovation for prevention latchup,pseudo-latchup path method,has been put forward that is based on latchup effects of bulk-Si CMOS devices.
从体硅CMOS器件闭锁效应入手,提出了抑制闭锁一种新方法—伪闭锁路法。
95 Abstract With the rapid development of the IC manufacture, the critical dimension(CD) of the manufacturable CMOS technology has been put into 90nm, even 65nm and below from 130nm.
要 随着IC制造快速发展，可量产CMOS，其特征线宽也由0.13um 进入了90nm甚至65nm及以下。
声明：以上例句、词性分类均由互联网资源自动生成，部分未经过人工审核，其表达内容亦不代表本软件观点；若发现问题，欢迎向我们指正。
用户正在搜索
agglomerative, agglomerator, agglutinability, agglutinable, agglutinant, agglutinate, agglutinating, agglutination, agglutinative, agglutinator,
相似单词
CMMI, CMMS, CMMSSA, CMN, CMO, CMOS, CMOSIC, CMP, cmpd, cmpl,