Because the distribution of molecular director was not affected by lamellar decorating after quench, chemical etching and SEM technique were used to reveal disclination and director patterns.
由于样品淬火后饰在织构上而不影响分子取向矢的分布,因而可以用化学刻蚀和电
技术揭示其向错和取向矢图。
Because the distribution of molecular director was not affected by lamellar decorating after quench, chemical etching and SEM technique were used to reveal disclination and director patterns.
由于样品淬火后饰在织构上而不影响分子取向矢的分布,因而可以用化学刻蚀和电
技术揭示其向错和取向矢图。
声明:以上例句、词性分类均由互联网资生成,部分未经过人工审核,其表达内容亦不代表本软件的观点;若发现问题,欢迎向我们指正。
Because the distribution of molecular director was not affected by lamellar decorating after quench, chemical etching and SEM technique were used to reveal disclination and director patterns.
由于样品淬火后晶片织构上而不影响分子取向矢的分布,因而可以用化学刻蚀和电
技术揭示其向错和取向矢图。
声明:以上例句、词性分类均由互联自动生成,部分未经过人工审核,其表达内容亦不代表本软件的观点;若发现问题,欢迎向我们指正。
Because the distribution of molecular director was not affected by lamellar decorating after quench, chemical etching and SEM technique were used to reveal disclination and director patterns.
由于样品淬火后晶片装饰在织构上而不影响子取向
的
,
而可以用化学刻蚀和电
技术揭示其向错和取向
。
明:以上例句、词性
类均由互联网资源自动生成,部
未经过人工审核,其表达内容亦不代表本软件的观点;若发现问题,欢迎向我们指正。
Because the distribution of molecular director was not affected by lamellar decorating after quench, chemical etching and SEM technique were used to reveal disclination and director patterns.
由于样品淬火后晶片装饰在织构上不影响分子
的分布,
以用化学刻蚀和电
技术揭示其
错和
图。
声明:以上例句、词性分类均由互联网资源自动生成,部分未经过人工审核,其表达内容亦不代表本软件的观点;若发现问题,欢迎我们指正。
Because the distribution of molecular director was not affected by lamellar decorating after quench, chemical etching and SEM technique were used to reveal disclination and director patterns.
由于样品淬火后晶片装饰在织构上而不影响分子取矢的分布,因而可
学刻蚀
电
技术揭示其
取
矢图。
声明:上例句、词性分类均由互联网资源自动生成,部分未经过人工审核,其表达内容亦不代表本软件的观点;若发现问题,欢迎
我们指正。
Because the distribution of molecular director was not affected by lamellar decorating after quench, chemical etching and SEM technique were used to reveal disclination and director patterns.
由于样品淬火后晶片装饰在织构上而不影响子取向
布,因而可
用化学刻蚀和电
技术揭示其向错和取向
图。
:
上例句、词性
类均由互联网资源自动生成,部
未经过人工审核,其表达内容亦不代表本软件
观点;若发现问题,欢迎向我们指正。
Because the distribution of molecular director was not affected by lamellar decorating after quench, chemical etching and SEM technique were used to reveal disclination and director patterns.
由于样品淬火后晶片装饰在织构上而不影响分子取向矢的分布,因而可以用化学刻蚀和电技术揭示其向错和取向矢图。
声明:以上例句、词性分类均由互联网资源自动生成,部分未经过人工审核,其容亦不代
本软件的观点;若发现问题,欢迎向我们指正。
Because the distribution of molecular director was not affected by lamellar decorating after quench, chemical etching and SEM technique were used to reveal disclination and director patterns.
由于样品淬火后晶片装饰在织构上而不影响分子取向矢的分布,因而可以用化学刻蚀和电技术揭示其向错和取向矢图。
声明:以上、词性分类均由互联网资源自动生成,部分未经过
核,其表达内容亦不代表本软件的观点;若发现问题,欢迎向我们指正。
Because the distribution of molecular director was not affected by lamellar decorating after quench, chemical etching and SEM technique were used to reveal disclination and director patterns.
于样品淬火后晶片装饰在织构上而不影响分子取向矢的分布,因而可以用化学刻蚀和电
技术揭示其向错和取向矢图。
声明:以上例、词性分类均
互联网资源自动生成,部分未经
审核,其表达内容亦不代表本软件的观点;若发现问题,欢迎向我们指正。
Because the distribution of molecular director was not affected by lamellar decorating after quench, chemical etching and SEM technique were used to reveal disclination and director patterns.
由于样品淬火装饰在织构上而不影响分子取向矢的分布,因而可以用化学刻蚀和电
技术揭示其向错和取向矢图。
声明:以上例句、词性分类均由互联网资源成,部分未经过人工审核,其表达内容亦不代表本软件的观点;若发现问题,欢迎向我们指正。