The main structure have:Electromagnet and Heng galvanism source, numerical type Gauss account(the effect of Huo Er) and ammeter and volt account, have control dish of illuminate the system.
电磁铁和恒流电源、数字式高斯计 (霍尔效)、
计和伏特计、配有照
系统的控制盘。
The main structure have:Electromagnet and Heng galvanism source, numerical type Gauss account(the effect of Huo Er) and ammeter and volt account, have control dish of illuminate the system.
电磁铁和恒流电源、数字式高斯计 (霍尔效)、
计和伏特计、配有照
系统的控制盘。
The devices have total ionizing dose (TID) capability of up to 300 Krad(Si), single event effect (SEE) immunity to 82 MeV, and are available in screened and commercial off- the-shelf (COTS) versions.
器件的总离子注入能力高达300千拉德(硅),抗单粒子效为82兆电子伏特,同时有屏蔽型和商用现货型的产品。
声:
例句、词性分类均由互联网资源自动生成,部分未经过人工审核,其表达内容亦不代表本软件的观点;若发现问题,欢迎向我们指正。
The main structure have:Electromagnet and Heng galvanism source, numerical type Gauss account(the effect of Huo Er) and ammeter and volt account, have control dish of illuminate the system.
磁铁和恒流
源、数字式高斯计 (霍尔效应)、安培计和伏特计、配有照明系统的控制盘。
The devices have total ionizing dose (TID) capability of up to 300 Krad(Si), single event effect (SEE) immunity to 82 MeV, and are available in screened and commercial off- the-shelf (COTS) versions.
器件的总离子注入能力高达300千拉德(硅),抗单粒子效应为82兆子伏特,同时有屏蔽型和商用现货型的产品。
声明:以上例、词性
类均由互联网资源自动生
,
未经过人工审核,其表达内容亦不代表本软件的观点;若发现问题,欢迎向我们指正。
The main structure have:Electromagnet and Heng galvanism source, numerical type Gauss account(the effect of Huo Er) and ammeter and volt account, have control dish of illuminate the system.
电磁铁和恒流电源、数字式高斯计 (霍尔效应)、安培计和计、配有照明系统
控制盘。
The devices have total ionizing dose (TID) capability of up to 300 Krad(Si), single event effect (SEE) immunity to 82 MeV, and are available in screened and commercial off- the-shelf (COTS) versions.
件
总离子注入能力高达300千拉德(硅),抗单粒子效应为82兆电子
,
时有屏蔽型和商用现货型
产品。
声明:以上例句、词性分类均由互联网资源自动生成,部分未经过人工审核,其表达内容亦不代表本软件观点;若发现问题,欢迎向我们指正。
The main structure have:Electromagnet and Heng galvanism source, numerical type Gauss account(the effect of Huo Er) and ammeter and volt account, have control dish of illuminate the system.
磁铁和恒
、数字式高斯计 (霍尔效应)、安培计和伏特计、配有照明系统的控制盘。
The devices have total ionizing dose (TID) capability of up to 300 Krad(Si), single event effect (SEE) immunity to 82 MeV, and are available in screened and commercial off- the-shelf (COTS) versions.
器件的总离子注入能力高达300千拉德(硅),抗单粒子效应为82兆子伏特,同时有屏蔽型和商用现货型的产品。
声明:以上例句、词性分类均由互自动生成,部分未经过人工审核,其表达内容亦不代表本软件的观点;若发现问题,欢迎向我们指正。
The main structure have:Electromagnet and Heng galvanism source, numerical type Gauss account(the effect of Huo Er) and ammeter and volt account, have control dish of illuminate the system.
电磁铁和恒流电、
式高斯计 (霍尔效应)、安培计和伏特计、配有照明系统的控制盘。
The devices have total ionizing dose (TID) capability of up to 300 Krad(Si), single event effect (SEE) immunity to 82 MeV, and are available in screened and commercial off- the-shelf (COTS) versions.
器件的总离子注入能力高达300千拉德(硅),抗单粒子效应为82兆电子伏特,同时有屏蔽型和商用现货型的产品。
声明:以上例句、词性分类均网资
自动生成,部分未经过人工审核,其表达内容亦不代表本软件的观点;若发现问题,欢迎向我们指正。
The main structure have:Electromagnet and Heng galvanism source, numerical type Gauss account(the effect of Huo Er) and ammeter and volt account, have control dish of illuminate the system.
电磁铁和恒流电源、数字式高斯计 (霍尔效应)、安培计和伏计、配有照明系统的控制
。
The devices have total ionizing dose (TID) capability of up to 300 Krad(Si), single event effect (SEE) immunity to 82 MeV, and are available in screened and commercial off- the-shelf (COTS) versions.
件的总离子注入能力高达300千拉德(硅),抗单粒子效应为82兆电子伏
,
有屏蔽型和商用现货型的产品。
声明:以上例句、词性分类均由互联网资源自动生成,部分未经过人工审核,其表达内容亦不代表本软件的观点;若发现问题,欢迎向我们指正。
The main structure have:Electromagnet and Heng galvanism source, numerical type Gauss account(the effect of Huo Er) and ammeter and volt account, have control dish of illuminate the system.
电磁铁和恒流电源、数字式高斯计 (霍尔效)、安培计和伏特计、配有照明系统的控制盘。
The devices have total ionizing dose (TID) capability of up to 300 Krad(Si), single event effect (SEE) immunity to 82 MeV, and are available in screened and commercial off- the-shelf (COTS) versions.
器件的总离能力高达300千拉德(硅),抗单粒
效
82
电
伏特,同时有屏蔽型和商用现货型的产品。
声明:以上例句、词性分类均由互联网资源自动生成,部分未经过人工审核,其表达内容亦不代表本软件的观点;若发现问题,欢迎向我们指正。
The main structure have:Electromagnet and Heng galvanism source, numerical type Gauss account(the effect of Huo Er) and ammeter and volt account, have control dish of illuminate the system.
电磁铁和恒流电源、数字式高斯 (霍尔效应)、
和伏特
、配有照
系统的控制盘。
The devices have total ionizing dose (TID) capability of up to 300 Krad(Si), single event effect (SEE) immunity to 82 MeV, and are available in screened and commercial off- the-shelf (COTS) versions.
器件的总离子注入能力高达300千拉德(硅),抗单粒子效应为82兆电子伏特,同时有屏蔽型和商用现货型的产品。
:
上例句、词性分类均由互联网资源自动生成,部分未经过人工审核,其表达内容亦不代表本软件的观点;若发现问题,欢迎向我们指正。
The main structure have:Electromagnet and Heng galvanism source, numerical type Gauss account(the effect of Huo Er) and ammeter and volt account, have control dish of illuminate the system.
电磁铁和恒流电源、数字式高斯计 (霍尔效应)、安培计和伏特计、配有照明系统的控制盘。
The devices have total ionizing dose (TID) capability of up to 300 Krad(Si), single event effect (SEE) immunity to 82 MeV, and are available in screened and commercial off- the-shelf (COTS) versions.
器件的总离子注入能力高达300千拉德(硅),抗单粒子效应为82兆电子伏特,同时有屏蔽型和商用现货型的产品。
声明:以上例句、词性分类均由互联网资源自动生成,部分未经过人工审,
达内容亦不代
本软件的观点;若发现问题,欢迎向我们指正。