Word sized memory access is allowed to unaligned memory addresses.Words are stored in the little-endian order.
字组(word, 4位元组)长度的存取允许不对齐
位址,字组是以低位字节
前的顺序储存
中。
Word sized memory access is allowed to unaligned memory addresses.Words are stored in the little-endian order.
字组(word, 4位元组)长度的存取允许不对齐
位址,字组是以低位字节
前的顺序储存
中。
In this study, gallium nitride nanowires were successfully grown on Silicon substrate using a simple resistive heated furnace, APCVD system, at room temperature.
发现氮化镓材料上具有室温铁磁
的
质,被预期能运用
磁
的元件和积
电路的材料上。
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