In this study, gallium nitride nanowires were successfully grown on Silicon substrate using a simple resistive heated furnace, APCVD system, at room temperature.

发现氮镓材料上具有室温铁磁性的性质，被预期运用磁性记忆体的元件和积体电路的材料上。

The catalysts on studying can divide into two kinds: the transition metal bifunctional catalysts and the nitride, carbide and oxycarbide catalysts of transition metals.

目前,正丁烷脱氢异构剂可以分为两类,过渡金属双功剂和过渡金属氮、碳和碳氧剂。

Only small amounts of wurtzite boron nitride and lonsdaleite exist naturally or have been made in the lab so until now no one had realised their superior strength.

天然存或者实验室制造的纤锌矿型氮和朗斯代尔石数量很少，直到现，也没有一个人发现它们令人吃惊的硬度。

The reason for the fail of carbon nitride synthesis was analysed and relevant graphitoid carbon nitride and unformed carbon nitrides were introduced in the article.

分析了妨碍碳氮合成成功的原因,对相关的类石墨的碳氮合和无定型的碳氮合作了介绍。

In this study, gallium nitride nanowires were successfully grown on Silicon substrate using a simple resistive heated furnace, APCVD system, at room temperature.

发现氮化镓材具有室温铁磁性的性质，被预期能运磁性记忆体的元件和积体电路的材。

The catalysts on studying can divide into two kinds: the transition metal bifunctional catalysts and the nitride, carbide and oxycarbide catalysts of transition metals.

前,正丁烷脱氢异构催化剂可以分为两类,过渡金属双功能催化剂和过渡金属氮化物、碳化物和碳氧化物催化剂。

Only small amounts of wurtzite boron nitride and lonsdaleite exist naturally or have been made in the lab so until now no one had realised their superior strength.

天然存或者实验室制造的纤锌矿型氮化硼和朗斯代尔石数量很少，直到现，也没有一个人发现它们令人吃惊的硬度。

The reason for the fail of carbon nitride synthesis was analysed and relevant graphitoid carbon nitride and unformed carbon nitrides were introduced in the article.

分析了妨碍碳氮化物合成成功的原因,对相关的类石墨的碳氮化合物和无定型的碳氮化合物作了介绍。

In this study, gallium nitride nanowires were successfully grown on Silicon substrate using a simple resistive heated furnace, APCVD system, at room temperature.

发现镓材料上具有室温铁磁质，被预期能运用磁记忆体元件和积体电路材料上。

The catalysts on studying can divide into two kinds: the transition metal bifunctional catalysts and the nitride, carbide and oxycarbide catalysts of transition metals.

目前,正丁烷脱氢异构催剂可以分为两类,过渡金属双功能催剂和过渡金属物、碳物和碳氧物催剂。

Only small amounts of wurtzite boron nitride and lonsdaleite exist naturally or have been made in the lab so until now no one had realised their superior strength.

天然存或者实验室制造纤锌矿型硼和朗斯代尔石数量很少，直到现，也没有一个人发现它们令人吃惊硬度。

The reason for the fail of carbon nitride synthesis was analysed and relevant graphitoid carbon nitride and unformed carbon nitrides were introduced in the article.

分析了妨碍碳物合成成功原因,对相关类石墨碳合物和无定型碳合物作了介绍。

In this study, gallium nitride nanowires were successfully grown on Silicon substrate using a simple resistive heated furnace, APCVD system, at room temperature.

发现氮化镓材具有室温铁磁性的性质，被预期能运磁性记忆体的元件和积体电路的材。

The catalysts on studying can divide into two kinds: the transition metal bifunctional catalysts and the nitride, carbide and oxycarbide catalysts of transition metals.

前,正丁烷脱氢异构催化剂可以分为两类,过渡金属双功能催化剂和过渡金属氮化物、碳化物和碳氧化物催化剂。

Only small amounts of wurtzite boron nitride and lonsdaleite exist naturally or have been made in the lab so until now no one had realised their superior strength.

天然存或者实验室制造的纤锌矿型氮化硼和朗斯代尔石数量很少，直到现，也没有一个人发现它们令人吃惊的硬度。

The reason for the fail of carbon nitride synthesis was analysed and relevant graphitoid carbon nitride and unformed carbon nitrides were introduced in the article.

分析了妨碍碳氮化物合成成功的原因,对相关的类石墨的碳氮化合物和无定型的碳氮化合物作了介绍。

In this study, gallium nitride nanowires were successfully grown on Silicon substrate using a simple resistive heated furnace, APCVD system, at room temperature.

发现氮化镓材料上具有室温铁磁性的性质，被预期能运用磁性记忆体的元件和积体电路的材料上。

The catalysts on studying can divide into two kinds: the transition metal bifunctional catalysts and the nitride, carbide and oxycarbide catalysts of transition metals.

目,烷脱氢异构催化剂可以分为两类,过渡属双功能催化剂和过渡属氮化物、碳化物和碳氧化物催化剂。

Only small amounts of wurtzite boron nitride and lonsdaleite exist naturally or have been made in the lab so until now no one had realised their superior strength.

天然存或者实验室制造的纤锌矿型氮化硼和朗斯代尔石数量很少，直到现，也没有一个人发现它们令人吃惊的硬度。

The reason for the fail of carbon nitride synthesis was analysed and relevant graphitoid carbon nitride and unformed carbon nitrides were introduced in the article.

分析了妨碍碳氮化物合成成功的原因,对相关的类石墨的碳氮化合物和无定型的碳氮化合物作了介绍。

In this study, gallium nitride nanowires were successfully grown on Silicon substrate using a simple resistive heated furnace, APCVD system, at room temperature.

发现氮材料上具有室性的性质，被预期能运用性记忆体的元件和积体电路的材料上。

The catalysts on studying can divide into two kinds: the transition metal bifunctional catalysts and the nitride, carbide and oxycarbide catalysts of transition metals.

目前,正丁烷脱氢异构催剂可以分为两类,过渡金属双功能催剂和过渡金属氮物、碳物和碳氧物催剂。

Only small amounts of wurtzite boron nitride and lonsdaleite exist naturally or have been made in the lab so until now no one had realised their superior strength.

天然存或者实验室制造的纤锌矿型氮硼和朗斯代尔石数量很少，直到现，也没有一个人发现它们令人吃惊的硬度。

The reason for the fail of carbon nitride synthesis was analysed and relevant graphitoid carbon nitride and unformed carbon nitrides were introduced in the article.

分析了妨碍碳氮物合成成功的原因,对相关的类石墨的碳氮合物和无定型的碳氮合物作了介绍。

In this study, gallium nitride nanowires were successfully grown on Silicon substrate using a simple resistive heated furnace, APCVD system, at room temperature.

发现氮镓材料上具有室温铁磁性的性质，被预期运用磁性记忆体的元件和积体电路的材料上。

The catalysts on studying can divide into two kinds: the transition metal bifunctional catalysts and the nitride, carbide and oxycarbide catalysts of transition metals.

目前,正丁烷脱氢异构催剂可以分为两类,过渡金属催剂和过渡金属氮物、物和氧物催剂。

Only small amounts of wurtzite boron nitride and lonsdaleite exist naturally or have been made in the lab so until now no one had realised their superior strength.

天然存或者实验室制造的纤锌矿型氮硼和朗斯代尔石数量很少，直到现，也没有一个人发现它们令人吃惊的硬度。

The reason for the fail of carbon nitride synthesis was analysed and relevant graphitoid carbon nitride and unformed carbon nitrides were introduced in the article.

分析了妨碍氮物合成成的原因,对相关的类石墨的氮合物和无定型的氮合物作了介绍。

In this study, gallium nitride nanowires were successfully grown on Silicon substrate using a simple resistive heated furnace, APCVD system, at room temperature.

发现化镓上具有室温铁磁性性质，被预期能运磁性记忆体元件和积体电路上。

The catalysts on studying can divide into two kinds: the transition metal bifunctional catalysts and the nitride, carbide and oxycarbide catalysts of transition metals.

目前,正丁烷脱氢异构催化剂可以分为两类,过渡金属双功能催化剂和过渡金属化物、碳化物和碳氧化物催化剂。

Only small amounts of wurtzite boron nitride and lonsdaleite exist naturally or have been made in the lab so until now no one had realised their superior strength.

天然存或者实验室制造纤锌矿型化硼和朗斯代尔石数量很少，直到现，也没有一个人发现它们令人吃惊硬度。

The reason for the fail of carbon nitride synthesis was analysed and relevant graphitoid carbon nitride and unformed carbon nitrides were introduced in the article.

分析了妨碍碳化物合成成功原因,对相关类石墨碳化合物和无定型碳化合物作了介绍。

In this study, gallium nitride nanowires were successfully grown on Silicon substrate using a simple resistive heated furnace, APCVD system, at room temperature.

发现镓材料上具有室温铁磁性的性，期能运用磁性记忆体的元件和积体电路的材料上。

The catalysts on studying can divide into two kinds: the transition metal bifunctional catalysts and the nitride, carbide and oxycarbide catalysts of transition metals.

目前,正丁烷脱氢异构催剂可以分为两类,过渡金属双功能催剂和过渡金属物、碳物和碳氧物催剂。

Only small amounts of wurtzite boron nitride and lonsdaleite exist naturally or have been made in the lab so until now no one had realised their superior strength.

天然存或者实验室制造的纤锌矿型硼和朗斯代尔石数量很少，直到现，也没有一个人发现它们令人吃惊的硬度。

The reason for the fail of carbon nitride synthesis was analysed and relevant graphitoid carbon nitride and unformed carbon nitrides were introduced in the article.

分析了妨碍碳物合成成功的原因,对相关的类石墨的碳合物和无定型的碳合物作了介绍。

In this study, gallium nitride nanowires were successfully grown on Silicon substrate using a simple resistive heated furnace, APCVD system, at room temperature.

发现镓材料上具有室温铁磁性的性质，被预期能运用磁性记忆的元件和积路的材料上。

The catalysts on studying can divide into two kinds: the transition metal bifunctional catalysts and the nitride, carbide and oxycarbide catalysts of transition metals.

目前,正丁烷脱氢异构催剂可以分为两类,过渡金属双功能催剂和过渡金属物、碳物和碳氧物催剂。

Only small amounts of wurtzite boron nitride and lonsdaleite exist naturally or have been made in the lab so until now no one had realised their superior strength.

天然存或者实验室制造的纤锌矿型硼和朗斯代尔石数量很少，直到现，也没有一个人发现它们令人吃惊的硬度。

The reason for the fail of carbon nitride synthesis was analysed and relevant graphitoid carbon nitride and unformed carbon nitrides were introduced in the article.

分析了妨碍碳物合成成功的原因,对相关的类石墨的碳合物和无定型的碳合物作了介绍。