An innovation for prevention latchup,pseudo-latchup path method,has been put forward that is based on latchup effects of bulk-Si CMOS devices.
从体硅CMOS器件
闭锁效应入手,提出了抑制闭锁一种新方法—伪闭锁路径法。
n. 互补
化物半导体
化物半导体95 Abstract With the rapid development of the IC manufacture, the critical dimension(CD) of the manufacturable CMOS technology has been put into 90nm, even 65nm and below from 130nm.
摘 要 随着IC制造技术快速发展，可量产CMOS技术，其特征线宽也由0.13um 进入了90nm甚至65nm及以下。
声明：以上例句、词性分类均由互联网资源自动生成，部分未
工审核，其表达内容亦不代表本软件
观点；若发现问题，欢迎向我们指正。
用户正在搜索
asynergy, asynesia, asynovia, asyntactic, asyntatic, asyntrophy, asystole, asystolic, Asyut, at,
相似单词
CMMI, CMMS, CMMSSA, CMN, CMO, CMOS, CMOSIC, CMP, cmpd, cmpl,
n. 
补金属氧化物半导
补金属氧化物半导An innovation for prevention latchup,pseudo-latchup path method,has been put forward that is based on latchup effects of bulk-Si CMOS devices.
从
CMOS
件闭锁效应入手,提出了抑制闭锁一种新方法—伪闭锁路径法。
95 Abstract With the rapid development of the IC manufacture, the critical dimension(CD) of the manufacturable CMOS technology has been put into 90nm, even 65nm and below from 130nm.
摘 要 随着IC制造技术快速发展，可量产CMOS技术，其特征线宽也
0.13um 进入了90nm甚至65nm及以下。
声明：以上例句、词性分类
联网资源自动生成，部分未经过人工审核，其表达内容亦不代表本软件观点；若发现问题，欢迎向我们指正。
用户正在搜索
at a stroke, at a time, at all, at all costs, at all events, at all times, at an angle, at any cost, at any price, at any rate,
相似单词
CMMI, CMMS, CMMSSA, CMN, CMO, CMOS, CMOSIC, CMP, cmpd, cmpl,
n. 互补金属氧化物半导体
An innovation for prevention latchup,pseudo-latchup path method,has been put forward that is based on latchup effects of bulk-Si CMOS devices.
从体硅CMOS器件闭锁效应入手,提出了抑制闭锁一种
法—伪闭锁路径法。
95 Abstract With the rapid development of the IC manufacture, the critical dimension(CD) of the manufacturable CMOS technology has been put into 90nm, even 65nm and below from 130nm.
摘 要 随着IC制造技术快速发展，可量产CMOS技术，其特征线
0.13um 进入了90nm甚至65nm及以下。
声明：以上例句、词性分类均互联网资源自动生成，部分未经过人工审核，其表达内容亦不代表本软件观点；若发现问题，欢迎向我们指正。
用户正在搜索
at full blast, at full tilt, at great length, at hand, at heart, at home, at intervals, at its best, at large, at last,
相似单词
CMMI, CMMS, CMMSSA, CMN, CMO, CMOS, CMOSIC, CMP, cmpd, cmpl,
n. 互补金属氧化物半导体
An innovation for prevention latchup,pseudo-latchup path method,has been put forward that is based on latchup effects of bulk-Si CMOS devices.
从体硅CMOS器件闭锁效应入手,提出了抑制闭锁一种新方法—伪闭锁路径法。
95 Abstract With the rapid development of the IC manufacture, the critical dimension(CD) of the manufacturable CMOS technology has been put into 90nm, even 65nm and below from 130nm.
摘 要 随着IC制造技术快速发展，可量产CMOS技术，
特征线宽也由0.13um 进入了90nm甚至65nm及以下。
声明：以上例句、词性分类均由互联网资源自动生成，部分未经过人工审
，
达内容亦不代本软件观点；若发现问题，欢迎向我们指正。
用户正在搜索
at once, at one stroke, at one time, at present, at random, at regular intervals, at school, at sea, at six, at stake,
相似单词
CMMI, CMMS, CMMSSA, CMN, CMO, CMOS, CMOSIC, CMP, cmpd, cmpl,
n. 互
氧化物半导体
氧化物半导体An innovation for prevention latchup,pseudo-latchup path method,has been put forward that is based on latchup effects of bulk-Si CMOS devices.
从体硅CMOS器件
闭锁效应入手,提出了抑制闭锁一种新方法—伪闭锁路径法。
95 Abstract With the rapid development of the IC manufacture, the critical dimension(CD) of the manufacturable CMOS technology has been put into 90nm, even 65nm and below from 130nm.
摘 要 随着IC制造技术快速发展，可量产CMOS技术，其特征线宽也由0.13um 进入了90nm甚至65nm及以下。
声明：以上例句、词性分类均由互联网资源自动生成，部分未经
审核，其表达内容亦不代表本软件
观点；若发现问题，欢迎向我们指正。
用户正在搜索
at the front of, at the head of, at the instance of, at the last moment, at the latest, at the least, at the mercy of, at the moment, at the most, at the opposite extreme,
相似单词
CMMI, CMMS, CMMSSA, CMN, CMO, CMOS, CMOSIC, CMP, cmpd, cmpl,
用户正在搜索
atelestite, atelia, atelic, atelier, ateliosis, ateliotic, atelocardia, atelocephalous, atelocheilia, ateloencephalia,
相似单词
CMMI, CMMS, CMMSSA, CMN, CMO, CMOS, CMOSIC, CMP, cmpd, cmpl,
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ATH, Athabasca, Athabaskan, Athalamida, athalamous, athalposis, athambia, athanasia, Athanasian, Athanasian Creed,
相似单词
CMMI, CMMS, CMMSSA, CMN, CMO, CMOS, CMOSIC, CMP, cmpd, cmpl,
n. 互补金属氧化物半导体
An innovation for prevention latchup,pseudo-latchup path method,has been put forward that is based on latchup effects of bulk-Si CMOS devices.
从体硅CMOS器件闭锁效应入手,提出了抑制闭锁一种新方法—伪闭锁路径法。
95 Abstract With the rapid development of the IC manufacture, the critical dimension(CD) of the manufacturable CMOS technology has been put into 90nm, even 65nm and below from 130nm.
摘 要 随着IC制造技术快速发展，可量产CMOS技术，特征线宽也由0.13um 进入了90nm甚至65nm及以下。
声明：以上例句、词性分类均由互联网资源自动生成，部分未经过人工审核，
内容亦不代本软件观点；若发现问题，欢迎向我们指正。
用户正在搜索
athelia, atheling, Athelney, Athelstan, athematic, Athena, athenaeum, Athenai, Athene, atheneum,
相似单词
CMMI, CMMS, CMMSSA, CMN, CMO, CMOS, CMOSIC, CMP, cmpd, cmpl,
n. 互补金属氧化物半导体
An innovation for prevention latchup,pseudo-latchup path method,has been put forward that is based on latchup effects of bulk-Si CMOS devices.
从体硅CMOS器件闭锁效应入手,提出了抑制闭锁一种新方法—伪闭锁路径法。
95 Abstract With the rapid development of the IC manufacture, the critical dimension(CD) of the manufacturable CMOS technology has been put into 90nm, even 65nm and below from 130nm.
摘 要 随着IC制造技术快速发展，可量产CMOS技术，特征线宽也由0.13um 进入了90nm甚至65nm及以下。
声明：以上例句、词性分类均由互联网资源自动生成，部分未经过人工审核，内容亦不代本软件观点；若发现问题，欢迎向我们指正。
用户正在搜索
athermic, athermobiosis, athermosystaltic, atherocheuma, atherogenesis, atherogenic, atheroma, atheromasia, atheromatosis, atheromatous,
相似单词
CMMI, CMMS, CMMSSA, CMN, CMO, CMOS, CMOSIC, CMP, cmpd, cmpl,
n. 补金属氧化物半导体
补金属氧化物半导体An innovation for prevention latchup,pseudo-latchup path method,has been put forward that is based on latchup effects of bulk-Si CMOS devices.
从体硅CMOS器件闭锁效应入手,提出了抑制闭锁一种新方法—伪闭锁路径法。
95 Abstract With the rapid development of the IC manufacture, the critical dimension(CD) of the manufacturable CMOS technology has been put into 90nm, even 65nm and below from 130nm.
摘 要 随着IC制造技术快速发展，可量产CMOS技术，特征线宽也由0.13um 进入了90nm甚至65nm及以下。
声明：以上例句、词性分类均由联网资源自动生成，部分未经过人工
，表达内容亦不代表本软件观点；若发现问题，欢迎向我们指正。
用户正在搜索
Athey, athiaminosis, Athiorhodaceae, athirst, athlestatin, athlete, athletes, athletes'village, athletic, athletic facility,
相似单词
CMMI, CMMS, CMMSSA, CMN, CMO, CMOS, CMOSIC, CMP, cmpd, cmpl,
n. 互补金属氧化物半导体
An innovation for prevention latchup,pseudo-latchup path method,has been put forward that is based on latchup effects of bulk-Si CMOS devices.
从体硅CMOS器件闭锁效应入手,提出了抑制闭锁一种新方法—伪闭锁路径法。
95 Abstract With the rapid development of the IC manufacture, the critical dimension(CD) of the manufacturable CMOS technology has been put into 90nm, even 65nm and below from 130nm.
摘 要 随着IC制造技术快速发展，可量产CMOS技术，特征线宽也由0.13um 进入了90nm甚至65nm及以下。
声明：以上例句、词性分类均由互联网资源自动生成，部分未经过人工审，达内容亦不代本软件观点；若发现问题，欢迎向我们指正。
用户正在搜索
athopia, Athos, athrill, athrob, athrocyte, athrocytosis, athrogenic, athrombia, athrophagocytosis, athrosterigma,
相似单词
CMMI, CMMS, CMMSSA, CMN, CMO, CMOS, CMOSIC, CMP, cmpd, cmpl,
n. 互补金属氧化物半导
An innovation for prevention latchup,pseudo-latchup path method,has been put forward that is based on latchup effects of bulk-Si CMOS devices.
从硅CMOS器件闭锁效应入手,提出了抑制闭锁一种新方法—伪闭锁路径法。
95 Abstract With the rapid development of the IC manufacture, the critical dimension(CD) of the manufacturable CMOS technology has been put into 90nm, even 65nm and below from 130nm.
摘 要 随着IC制造技术快速发展，可量产CMOS技术，其特征线宽也由0.13um 进入了90nm甚至65nm及以下。
声明：以上例句、词性分类均由互联网资源
成，部分未经过人工审核，其表达内容亦不代表本软件观点；若发现问题，欢迎向我们指正。
用户正在搜索
Athyridacea, athyroid, athyroidation, athyroidemia, athyroidosis, Athysanus, ATI, ATIC, atilt, atin,
相似单词
CMMI, CMMS, CMMSSA, CMN, CMO, CMOS, CMOSIC, CMP, cmpd, cmpl,