In this study, gallium nitride nanowires were successfully grown on Silicon substrate using a simple resistive heated furnace, APCVD system, at room temperature.
发现在氮化镓材料上具有室温铁磁性的性质,被预用在磁性记忆体的元件和
体电路的材料上。
In this study, gallium nitride nanowires were successfully grown on Silicon substrate using a simple resistive heated furnace, APCVD system, at room temperature.
发现在氮化镓材料上具有室温铁磁性的性质,被预用在磁性记忆体的元件和
体电路的材料上。
声明:以上、词性分类均由互联网资源自动生成,部分未经过人工审核,其表达内容亦不代表本软件的观点;若发现问题,欢迎向我们指正。
In this study, gallium nitride nanowires were successfully grown on Silicon substrate using a simple resistive heated furnace, APCVD system, at room temperature.
发现在氮化镓材料上具有室温铁磁性的性质,被预期能运用在磁性记忆体的元件和体电路的材料上。
声明:以上例句、词性分类均由互联网资源自动生成,部分未经过人工审核,其表达内代表本软件的观点;若发现问题,欢迎向我们指正。
In this study, gallium nitride nanowires were successfully grown on Silicon substrate using a simple resistive heated furnace, APCVD system, at room temperature.
发现在氮化镓材具有室温铁磁
的
质,被预期能运用在磁
体的元件和
体电路的材
。
明:以
例句、词
分类均由互联网资源自动生成,部分未经过人工审核,其表达内容亦不代表本软件的观点;若发现问题,欢迎向我们指正。
In this study, gallium nitride nanowires were successfully grown on Silicon substrate using a simple resistive heated furnace, APCVD system, at room temperature.
发现在氮化镓材料上具有室温铁磁,被预期能运用在磁
记忆体
元件和
体电路
材料上。
声明:以上例句、词分
互联网资源自动生成,部分未经过人工审核,其表达内容亦不代表本软件
观点;若发现问题,欢迎向我们指正。
In this study, gallium nitride nanowires were successfully grown on Silicon substrate using a simple resistive heated furnace, APCVD system, at room temperature.
发现在氮化镓材料上具有磁性的性质,被预期能运用在磁性记忆体的元件和
体电路的材料上。
声明:以上例句、词性分类均由互联自动生成,部分未经过人工审核,其表达内容亦不代表本软件的观点;若发现问题,欢迎向我们指正。
In this study, gallium nitride nanowires were successfully grown on Silicon substrate using a simple resistive heated furnace, APCVD system, at room temperature.
发现在氮化镓材料上具有室性的性质,被预期能运用在
性记忆体的元件和
体电路的材料上。
声明:以上例句、词性分类均由互源自动生成,部分未经过人工审核,其表达内容亦不代表本软件的观点;若发现问题,欢迎向我们指正。
In this study, gallium nitride nanowires were successfully grown on Silicon substrate using a simple resistive heated furnace, APCVD system, at room temperature.
发现氮化镓材料
具有室温铁磁性的性质,被预期能
磁性记忆体的元件和
体电路的材料
。
声明:句、词性分类均由互联网资源自动生成,部分未经过人工审核,其表达内容亦不代表本软件的观点;若发现问题,欢迎向我们指正。
In this study, gallium nitride nanowires were successfully grown on Silicon substrate using a simple resistive heated furnace, APCVD system, at room temperature.
发现在氮化镓具有室温铁磁性的性质,被预期能运用在磁性
的元件和
电路的
。
声明:以例句、词性分类均由互联网资源自动生成,部分未经过人工审核,其表达内容亦不代表本软件的观点;若发现问题,欢迎向我们指正。
In this study, gallium nitride nanowires were successfully grown on Silicon substrate using a simple resistive heated furnace, APCVD system, at room temperature.
发现在氮化镓材料上具有室温铁磁性的性质,被预期能运用在磁性记忆体的元件和体电路的材料上。
声明:以上例句、词性分类均由互联网资源自动生成,部分未经过人工审核,其达内容亦
本软件的观点;若发现问题,欢迎向我们指正。