Because the distribution of molecular director was not affected by lamellar decorating after quench, chemical etching and SEM technique were used to reveal disclination and director patterns.
由于火后晶片装饰在织构上而不影响分子取向矢的分布,因而可以用化学刻蚀和电镜
术揭示其向错和取向矢图。
Because the distribution of molecular director was not affected by lamellar decorating after quench, chemical etching and SEM technique were used to reveal disclination and director patterns.
由于火后晶片装饰在织构上而不影响分子取向矢的分布,因而可以用化学刻蚀和电镜
术揭示其向错和取向矢图。
声明:以上例句、词性分类均由互联网资源自动生成,部分人工审核,其表达内容亦不代表本软件的观点;若发现问题,欢迎向我们指正。
Because the distribution of molecular director was not affected by lamellar decorating after quench, chemical etching and SEM technique were used to reveal disclination and director patterns.
由于样品淬火后晶片装饰在织构上不影响分子取向矢的分
,
可以用化学刻蚀和电镜
术揭示其向错和取向矢
。
:以上例句、词性分类均由互联网资源自动生成,部分未经过人工审核,其表达内容亦不代表本软件的观点;若发现问题,欢迎向我们指正。
Because the distribution of molecular director was not affected by lamellar decorating after quench, chemical etching and SEM technique were used to reveal disclination and director patterns.
由于样品淬火后晶片装饰在织构上而不影响分子取向矢的分布,因而可以用化学刻蚀和电镜术揭示
向错和取向矢图。
声明:以上、词性分类均由互联网资源自动生成,部分未经过人工审
,
达内容亦不代
本软件的观点;若发现问题,欢迎向我们指正。
Because the distribution of molecular director was not affected by lamellar decorating after quench, chemical etching and SEM technique were used to reveal disclination and director patterns.
由于样品淬火后晶片装饰在织构上而不子取向矢的
布,因而可以用化学刻蚀和电镜
术揭示其向错和取向矢图。
声明:以上例句、词性由互联网资源自动生成,部
未经过人工审核,其表达内容亦不代表本软件的观点;若发现问题,欢迎向我们指正。
Because the distribution of molecular director was not affected by lamellar decorating after quench, chemical etching and SEM technique were used to reveal disclination and director patterns.
于样品淬火后晶片装饰在织构
影响分子取向矢的分布,因
可以用化学刻蚀和电镜
术揭示其向错和取向矢图。
声明:以例句、词性分类均
网资源自动生成,部分未经过人工审核,其表达内容亦
代表本软件的观点;若发现问题,欢迎向我们指正。
Because the distribution of molecular director was not affected by lamellar decorating after quench, chemical etching and SEM technique were used to reveal disclination and director patterns.
由于样品淬火后晶片装饰在织构上而不影响分子取矢的分布,因而可以用化学
电镜
术揭
错
取
矢图。
声明:以上例句、词性分类均由互联网资源自动生成,部分未经过人工审核,表达内容亦不代表本软件的观点;若发现问题,欢迎
我们指正。
Because the distribution of molecular director was not affected by lamellar decorating after quench, chemical etching and SEM technique were used to reveal disclination and director patterns.
由于样品淬火后晶片装饰在织构上而不影响分子的分布,因而可以用化学刻蚀和电镜
术揭示其
错和
图。
声明:以上、词性分类均由互联网资源自动生成,部分未经过人工审核,其表达内容亦不代表本软件的观点;若发现问题,欢迎
我们指正。
Because the distribution of molecular director was not affected by lamellar decorating after quench, chemical etching and SEM technique were used to reveal disclination and director patterns.
由于样品淬火后晶片装构上而不影响分子取向矢的分布,因而可以用化学刻蚀和电镜
术揭示其向错和取向矢图。
声明:以上例句、词性分类均由互联网动生成,部分未经过人工审核,其表达内容亦不代表本软件的观点;若发现问题,欢迎向我们指正。
Because the distribution of molecular director was not affected by lamellar decorating after quench, chemical etching and SEM technique were used to reveal disclination and director patterns.
于样品淬火后晶片装饰在织构
影响分子取向矢的分布,因
可以用化学刻蚀和电镜
术揭示其向错和取向矢图。
声明:以例句、词性分类均
网资源自动生成,部分未经过人工审核,其表达内容亦
代表本软件的观点;若发现问题,欢迎向我们指正。
Because the distribution of molecular director was not affected by lamellar decorating after quench, chemical etching and SEM technique were used to reveal disclination and director patterns.
由于样品淬火后晶片装饰在织构上而不影响子取向矢的
,
而可
用化学刻蚀和电镜
术揭示其向错和取向矢图。
:
上例句、词性
类均由互联网资源自动生成,部
未经过人工审核,其表达内容亦不代表本软件的观点;若发现问题,欢迎向我们指正。