Because the distribution of molecular director was not affected by lamellar decorating after quench, chemical etching and SEM technique were used to reveal disclination and director patterns.
由于样品淬火后晶片装饰在织构上而不影响向矢的
布,因而可以用化学刻蚀和电镜
术揭示其向错和
向矢图。
Because the distribution of molecular director was not affected by lamellar decorating after quench, chemical etching and SEM technique were used to reveal disclination and director patterns.
由于样品淬火后晶片装饰在织构上而不影响向矢的
布,因而可以用化学刻蚀和电镜
术揭示其向错和
向矢图。
声明:以上例句、词类均由互联网资源自动生成,部
未经过人工审核,其表达内容亦不代表本软件的观点;若发现问题,欢迎向我们指正。
Because the distribution of molecular director was not affected by lamellar decorating after quench, chemical etching and SEM technique were used to reveal disclination and director patterns.
由于样品淬火后晶片装饰在织构而不影响
子取向
布,因而可
用化学刻蚀和电镜
术揭示其向错和取向
图。
声明:句、词性
类均由互联网资源自动生成,部
未经过人工审核,其表达内容亦不代表本软件
观点;若发现问题,欢迎向我们指正。
Because the distribution of molecular director was not affected by lamellar decorating after quench, chemical etching and SEM technique were used to reveal disclination and director patterns.
品淬火后晶片装饰在织构上而不影响分子取向矢的分布,因而可以用化学刻蚀和电镜
术揭示其向错和取向矢图。
声明:以上例句、词性分类均互联网资源自动生成,部分未经
审核,其表达内容亦不代表本软件的观点;若发现问题,欢迎向我们指正。
Because the distribution of molecular director was not affected by lamellar decorating after quench, chemical etching and SEM technique were used to reveal disclination and director patterns.
由于样品淬火后晶片装饰上而不影响分子取向矢的分布,因而可以用化学刻蚀和电镜
术揭示其向错和取向矢图。
声明:以上例句、词性分类均由互联自动生成,部分未经过人工审核,其表达内容亦不代表本软件的观点;若发现问题,欢迎向我们指正。
Because the distribution of molecular director was not affected by lamellar decorating after quench, chemical etching and SEM technique were used to reveal disclination and director patterns.
由于样品淬火后晶片装饰在织构上而不影响分子的分布,因而可以用化学刻蚀和电镜
术揭示其
错和
图。
声明:以上、词性分类均由互联网资源自动生成,部分未经过人工审核,其表达内容亦不代表本软件的观点;若发现问题,欢迎
我们指正。
Because the distribution of molecular director was not affected by lamellar decorating after quench, chemical etching and SEM technique were used to reveal disclination and director patterns.
由于样品淬火后饰在织构上而不影响分子取向矢的分布,因而可以用化学刻蚀和电镜
术揭示其向错和取向矢图。
声明:以上例句、词性分类均由互联网资源自,部分未经过人工审核,其表达内容亦不代表本软件的观点;若发现问题,欢迎向我们指正。
Because the distribution of molecular director was not affected by lamellar decorating after quench, chemical etching and SEM technique were used to reveal disclination and director patterns.
由于样品淬火后晶片装饰在织构上而不影响分子的分布,因而
化学刻蚀和电镜
术揭示其
错和
图。
声明:上例句、词性分类均由互联网资源自动生成,部分未经过人工审核,其表达内容亦不代表本软件的观点;若发现问题,欢迎
我们指正。
Because the distribution of molecular director was not affected by lamellar decorating after quench, chemical etching and SEM technique were used to reveal disclination and director patterns.
由于样品淬火后晶片装饰上而不影响分子取向矢的分布,因而可以用化学刻蚀和电镜
术揭示其向错和取向矢图。
声明:以上例句、词性分类均由互联自动生成,部分未经过人工审核,其表达内容亦不代表本软件的观点;若发现问题,欢迎向我们指正。
Because the distribution of molecular director was not affected by lamellar decorating after quench, chemical etching and SEM technique were used to reveal disclination and director patterns.
由于样品淬火后晶片装饰在织构上而影响分子取向矢的分布,因而可以用化学刻蚀和电镜
术揭示其向错和取向矢图。
声明:以上例句、词性分类均由互联网资源自动生成,部分未经过人工审核,其达内容亦
本软件的观点;若发现问题,欢迎向我们指正。
Because the distribution of molecular director was not affected by lamellar decorating after quench, chemical etching and SEM technique were used to reveal disclination and director patterns.
由于样品淬火后晶片装饰在织构上而不影响分子取向矢的分布,因而可以用化学刻蚀和电镜术揭示其向错和取向矢图。
声明:以上例句、词性分类均由互联网资源自动生成,部分未经过人工审核,其达内容亦不
软件的观点;若发现问题,欢迎向我们指正。