Because the distribution of molecular director was not affected by lamellar decorating after quench, chemical etching and SEM technique were used to reveal disclination and director patterns.
由于样品淬火后晶片装饰在织构上而不影响分子取矢的分布,因而可以用
蚀和电
技术揭
错和取
矢图。
Because the distribution of molecular director was not affected by lamellar decorating after quench, chemical etching and SEM technique were used to reveal disclination and director patterns.
由于样品淬火后晶片装饰在织构上而不影响分子取矢的分布,因而可以用
蚀和电
技术揭
错和取
矢图。
声明:以上例句、词性分类均由互联网资源自动生成,部分未经过人工审核,表达内容亦不代表本软件的观点;若发现问题,欢迎
我们指正。
Because the distribution of molecular director was not affected by lamellar decorating after quench, chemical etching and SEM technique were used to reveal disclination and director patterns.
由于火后晶片装饰在织构上而不影响
子取向矢的
布,因而可以用化学刻蚀和电
技术揭示其向错和取向矢图。
声明:以上例句、词性类均由互联网资源自动生成,
经过人工审核,其表达内容亦不代表本软件的观点;若发现问题,欢迎向我们指正。
Because the distribution of molecular director was not affected by lamellar decorating after quench, chemical etching and SEM technique were used to reveal disclination and director patterns.
由于样品淬火后晶片装饰在织构上而不影取向矢的
布,因而可以用化学刻蚀和电
技术揭示其向错和取向矢图。
声明:以上例、词
类均由互联网资源自动生成,部
未经过人工审核,其表达内容亦不代表本软件的观点;若发现问题,欢迎向我们指正。
Because the distribution of molecular director was not affected by lamellar decorating after quench, chemical etching and SEM technique were used to reveal disclination and director patterns.
于样品淬火后晶片装饰在
而不影响分子取向矢的分布,因而可以用化学刻蚀和电
技术揭示其向错和取向矢图。
声明:以例句、词性分类均
网资源自动生成,部分未经过人工审核,其表达内容亦不代表本软件的观点;若发现问题,欢迎向我们指正。
Because the distribution of molecular director was not affected by lamellar decorating after quench, chemical etching and SEM technique were used to reveal disclination and director patterns.
由于样品淬火装饰在织构上而不影响分子取向矢的分布,因而可以用化学刻蚀和电
技术揭示其向错和取向矢图。
声明:以上例句、词性分类均由互联网资源成,部分未经过人工审核,其表达内容亦不代表本软件的观点;若发现问题,欢迎向我们指正。
Because the distribution of molecular director was not affected by lamellar decorating after quench, chemical etching and SEM technique were used to reveal disclination and director patterns.
由于火后晶片装饰在织构上而不影响
子取向矢的
布,因而可以用化学刻蚀和电
技术揭示其向错和取向矢图。
声明:以上例句、词性类均由互联网资源自动生成,
经过人工审核,其表达内容亦不代表本软件的观点;若发现问题,欢迎向我们指正。
Because the distribution of molecular director was not affected by lamellar decorating after quench, chemical etching and SEM technique were used to reveal disclination and director patterns.
由于样品淬火后晶片装饰在织构上而不影响向矢的
布,因而可以用化学刻蚀和电
技术揭示其向错和
向矢图。
声明:以上、词性
类均由互联网资源自动生成,部
未经过人工审核,其表达内容亦不代表本软件的观点;若发现问题,欢迎向我们指正。
Because the distribution of molecular director was not affected by lamellar decorating after quench, chemical etching and SEM technique were used to reveal disclination and director patterns.
由于样品淬火后晶片装饰在织构上而不影响分子取向矢的分布,因而可以用化学刻示其向错
取向矢图。
声明:以上例句、词性分类均由互联网资源自动生成,部分未经过人工审核,其表达内容亦不代表本软件的观点;若发现问题,欢迎向我们指正。
Because the distribution of molecular director was not affected by lamellar decorating after quench, chemical etching and SEM technique were used to reveal disclination and director patterns.
由于样品淬火后晶片装饰在织构上而不影响分子取矢的分布,因而可以
刻蚀和电
技术揭示
和取
矢图。
声明:以上例句、词性分类均由互联网资源自动生成,部分未经过人工审核,表达内容亦不代表本软件的观点;若发现问题,欢迎
我们指正。