The main structure have:Electromagnet and Heng galvanism source, numerical type Gauss account(the effect of Huo Er) and ammeter and volt account, have control dish of illuminate the system.
电磁铁和恒流电源、数字式高斯计 (霍尔效应)、安培计和伏特计、配有照明系制盘。
The main structure have:Electromagnet and Heng galvanism source, numerical type Gauss account(the effect of Huo Er) and ammeter and volt account, have control dish of illuminate the system.
电磁铁和恒流电源、数字式高斯计 (霍尔效应)、安培计和伏特计、配有照明系制盘。
The devices have total ionizing dose (TID) capability of up to 300 Krad(Si), single event effect (SEE) immunity to 82 MeV, and are available in screened and commercial off- the-shelf (COTS) versions.
器件总离子注入能力高达300千拉德(硅),抗单粒子效应为82兆电子伏特,同时有
和商用现货
产品。
声明:以上例句、词性分类均由互联网资源自动生成,部分未经过人工审核,其表达内容亦不代表本软件观点;若发现问题,欢迎向我们指正。
The main structure have:Electromagnet and Heng galvanism source, numerical type Gauss account(the effect of Huo Er) and ammeter and volt account, have control dish of illuminate the system.
磁铁和恒流
源、数字式高斯计 (霍尔效应)、安培计和伏特计、配有照明系统的控制盘。
The devices have total ionizing dose (TID) capability of up to 300 Krad(Si), single event effect (SEE) immunity to 82 MeV, and are available in screened and commercial off- the-shelf (COTS) versions.
器件的总入能力高达300千拉德(硅),抗单粒
效应
82
伏特,同时有屏蔽型和商用现货型的产品。
声明:以上例句、词性分类均由互联网资源自动生成,部分未经过人工审核,其表达内容亦不代表本软件的观点;若发现问题,欢迎向我们指正。
The main structure have:Electromagnet and Heng galvanism source, numerical type Gauss account(the effect of Huo Er) and ammeter and volt account, have control dish of illuminate the system.
电磁铁和恒流电源、数字式高斯计 (霍尔效应)、安培计和伏特计、配有照明系统的控制盘。
The devices have total ionizing dose (TID) capability of up to 300 Krad(Si), single event effect (SEE) immunity to 82 MeV, and are available in screened and commercial off- the-shelf (COTS) versions.
器件的总离子注入能力高达300千拉德(硅),抗单粒子效应为82兆电子伏特,同时有屏蔽型和商用现货型的产品。
声明:以上例句、词性分类均由互联网资源自动生成,部分未经过核,其表达内容亦不代表本软件的观点;若发现问题,欢迎向我们指正。
The main structure have:Electromagnet and Heng galvanism source, numerical type Gauss account(the effect of Huo Er) and ammeter and volt account, have control dish of illuminate the system.
电磁铁和恒流电源、高斯计 (霍尔效应)、安培计和伏特计、配有照明系统的控制盘。
The devices have total ionizing dose (TID) capability of up to 300 Krad(Si), single event effect (SEE) immunity to 82 MeV, and are available in screened and commercial off- the-shelf (COTS) versions.
器件的总离子注入能力高达300千拉德(硅),抗单粒子效应为82兆电子伏特,同时有屏蔽型和商用现货型的产品。
声明:以上例句、词性分类联网资源自动生成,部分未经过人工审核,其表达内容亦不代表本软件的观点;若发现问题,欢迎向我们指正。
The main structure have:Electromagnet and Heng galvanism source, numerical type Gauss account(the effect of Huo Er) and ammeter and volt account, have control dish of illuminate the system.
电磁铁和恒流电源、数字式高斯计 (霍尔效应)、安培计和伏特计、配有照明系统的控。
The devices have total ionizing dose (TID) capability of up to 300 Krad(Si), single event effect (SEE) immunity to 82 MeV, and are available in screened and commercial off- the-shelf (COTS) versions.
件的总离子注入能力高达300千拉德(硅),抗单粒子效应为82兆电子伏特,
有屏蔽型和商用现货型的产品。
声明:以上例句、词性分类均由互联网资源自动生成,部分未经过人工审核,其表达内容亦不代表本软件的观点;若发现问题,欢迎向我们指正。
The main structure have:Electromagnet and Heng galvanism source, numerical type Gauss account(the effect of Huo Er) and ammeter and volt account, have control dish of illuminate the system.
电磁流电
、数字式高斯计 (霍尔效应)、安培计
伏特计、配有照明系统的控制盘。
The devices have total ionizing dose (TID) capability of up to 300 Krad(Si), single event effect (SEE) immunity to 82 MeV, and are available in screened and commercial off- the-shelf (COTS) versions.
器件的总离子注入能力高达300千拉德(硅),抗单粒子效应为82兆电子伏特,同时有屏蔽型商用现货型的产品。
声明:以上例句、词性分类均由互联网资生成,部分未经过人工审核,其表达内容亦不代表本软件的观点;若发现问题,欢迎向我们指正。
The main structure have:Electromagnet and Heng galvanism source, numerical type Gauss account(the effect of Huo Er) and ammeter and volt account, have control dish of illuminate the system.
电磁铁和恒流电源、数字式高斯计 (霍尔效应)、安培计和伏特计、配有照明系统的控制盘。
The devices have total ionizing dose (TID) capability of up to 300 Krad(Si), single event effect (SEE) immunity to 82 MeV, and are available in screened and commercial off- the-shelf (COTS) versions.
器件的总离子注入能力高达300千拉德(硅),抗单粒子效应为82兆电子伏特,同时有屏蔽型和商用现货型的产品。
声明:以上、词性
类均由互联网资源自动生成,
经过人工审核,其表达内容亦不代表本软件的观点;若发现问题,欢迎向我们指正。
The main structure have:Electromagnet and Heng galvanism source, numerical type Gauss account(the effect of Huo Er) and ammeter and volt account, have control dish of illuminate the system.
电磁铁和恒流电源、数字式高斯计 (霍尔效)、安培计和伏特计、配有照明系统的控制盘。
The devices have total ionizing dose (TID) capability of up to 300 Krad(Si), single event effect (SEE) immunity to 82 MeV, and are available in screened and commercial off- the-shelf (COTS) versions.
器件的总离能力高达300千拉德(硅),抗单粒
效
82
电
伏特,同时有屏蔽型和商用现货型的产品。
声明:以上例句、词性分类均由互联网资源自动生成,部分未经过人工审核,其表达内容亦不代表本软件的观点;若发现问题,欢迎向我们指正。
The main structure have:Electromagnet and Heng galvanism source, numerical type Gauss account(the effect of Huo Er) and ammeter and volt account, have control dish of illuminate the system.
电磁铁和恒流电源、数字式斯计 (霍尔效应)、安培计和伏特计、配有照明系统的控制盘。
The devices have total ionizing dose (TID) capability of up to 300 Krad(Si), single event effect (SEE) immunity to 82 MeV, and are available in screened and commercial off- the-shelf (COTS) versions.
器件的总离子注入能力300
拉德(硅),
子效应为82兆电子伏特,同时有屏蔽型和商用现货型的产品。
声明:以上例句、词性分类均由互联网资源自动生成,部分未经过人工审核,其表内容亦不代表本软件的观点;若发现问题,欢迎向我们指正。